Abstract The exchange bias effect in FeNi/FeMn/GdxCo100-x films with a pinning antiferromagnetic FeMn layer and an exchange-biased ferrimagnetic amorphous Gd-Co layer was studied. The FeNi layer allows the formation of the fcc lattice of FeMn, i.e. the antiferromagnetic γ-phase of FeMn. The Gd content was varied within 15–25 at. % in order to obtain different temperature dependences of the spontaneous magnetization Ms(T) of the Gd-Co layer. The magnetic properties of the films were determined from hysteresis loops measured in the temperature range 5–350 K. A correlation between Ms(T) and the temperature dependences of the exchange bias field HebGdCo(T) was established. In particular, it was shown that there is an inversion of the sign and sharp increase of the value of HebGdCo near the magnetic compensation state. The first one is a consequence of the minimization of the spontaneous magnetization of Gd-Co layer at the compensation temperature. The second one shows the predominance of the exchange interaction of the antiferromagnetic layer with the cobalt magnetic sub-system of the ferrimagnetic layer as a contribution to the interlayer exchange coupling.

中文翻译：

---

FeNi/FeMn/Gd-Co 薄膜中的交换偏置特征

摘要 研究了具有钉扎反铁磁 FeMn 层和交换偏置亚铁磁非晶 Gd-Co 层的 FeNi/FeMn/GdxCo100-x 薄膜中的交换偏置效应。FeNi层允许形成FeMn的fcc晶格，即FeMn的反铁磁γ相。Gd 含量在 15-25at 之间变化。% 以获得 Gd-Co 层的自发磁化强度 Ms(T) 的不同温度依赖性。薄膜的磁性由在 5-350 K 温度范围内测量的磁滞回线确定。建立了 Ms(T) 与交换偏置场 HebGdCo(T) 的温度依赖性之间的相关性。特别是，表明在磁补偿状态附近存在符号反转和 HebGdCo 值的急剧增加。第一个是在补偿温度下 Gd-Co 层的自发磁化最小化的结果。第二个显示了反铁磁层与亚铁磁层的钴磁性子系统的交换相互作用的优势，作为对层间交换耦合的贡献。