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Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-30 , DOI: 10.1021/acs.nanolett.0c00545 Min Lu 1 , Jie Guo 1 , Siqi Sun 1 , Po Lu 1 , Jinlei Wu 1 , Yu Wang 1 , Stephen V. Kershaw 2 , William W. Yu 1, 3 , Andrey L. Rogach 2 , Yu Zhang 1
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-30 , DOI: 10.1021/acs.nanolett.0c00545 Min Lu 1 , Jie Guo 1 , Siqi Sun 1 , Po Lu 1 , Jinlei Wu 1 , Yu Wang 1 , Stephen V. Kershaw 2 , William W. Yu 1, 3 , Andrey L. Rogach 2 , Yu Zhang 1
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Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI3 quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI3 QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm–2, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm–2) and a high luminance of 14 725 cd m–2, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.
中文翻译：
通过应用乙酰丙酮锆表面改性实现具有顶部发射结构和低效率滚降的明亮CsPbI 3钙钛矿量子点发光二极管
在CsPbI 3量子点（QDs）合成中用作共前体的乙酰丙酮锆将其光致发光量子效率提高到90％以上。利用底部电极和顶部电极之间的强微腔共振，设计具有高导热率（以更好地消散在高电流密度下产生的焦耳热）的Si衬底上的顶部发射器件结构，以提高光提取效率。这些改进的结果是，利用Zr修饰的CsPbI 3 QD在686 nm处进行电致发光的发光二极管（LED）在108 mA cm –2的电流密度下显示出13.7％的外部量子效率（EQE）。结合了低效率的滚降（在500 mA cm –2的高电流密度下保持EQE为12.5％）和14 725 cd m –2的高亮度，以及反复点亮设备的稳定性（在高驱动电流密度下循环打开和关闭）已大大增强。
更新日期：2020-04-24
中文翻译：
通过应用乙酰丙酮锆表面改性实现具有顶部发射结构和低效率滚降的明亮CsPbI 3钙钛矿量子点发光二极管
在CsPbI 3量子点（QDs）合成中用作共前体的乙酰丙酮锆将其光致发光量子效率提高到90％以上。利用底部电极和顶部电极之间的强微腔共振，设计具有高导热率（以更好地消散在高电流密度下产生的焦耳热）的Si衬底上的顶部发射器件结构，以提高光提取效率。这些改进的结果是，利用Zr修饰的CsPbI 3 QD在686 nm处进行电致发光的发光二极管（LED）在108 mA cm –2的电流密度下显示出13.7％的外部量子效率（EQE）。结合了低效率的滚降（在500 mA cm –2的高电流密度下保持EQE为12.5％）和14 725 cd m –2的高亮度，以及反复点亮设备的稳定性（在高驱动电流密度下循环打开和关闭）已大大增强。
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