III–V semiconductor lasers epitaxially grown on silicon, especially on a silicon-on-insulator (SOI) platform, have been considered one of the most promising approaches to realize an integrated light source for silicon photonics. Although notable achievements have been reported on InP-based 1.5 µm III–V semiconductor lasers directly grown on silicon substrates, phosphorus-free 1.5 µm InAs quantum dot (QD) lasers on both silicon and SOI platforms are still uncharted territory. In this work, we demonstrate, to the best of our knowledge, the first phosphorus-free InAs QD microdisk laser epitaxially grown on SOI substrate emitting at the telecommunications S-band by growing metamorphic InAs/InGaAs QDs on (111)-faceted SOI hollow structures. The lasing threshold power for a seven-layer InAs QD microdisk laser with a diameter of 4 µm is measured as 234 μW at 200 K. For comparison, identical microdisk lasers grown on GaAs substrate are also characterized. The results obtained pave the way for an on-chip 1.5 µm light source for long-haul telecommunications.

中文翻译：

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变质InGaAs / SOI平台上的无磷1.5 µm InAs量子点微盘激光器

外延生长在硅上，特别是绝缘体上硅（SOI）平台上的III–V半导体激光器，被认为是实现硅光子集成光源的最有前途的方法之一。尽管已经报道了直接在硅衬底上生长的基于InP的1.5 µm III–V半导体激光器的显著成就，但硅和SOI平台上的无磷1.5 µm InAs量子点（QD）激光器仍是未知领域。在这项工作中，我们尽我们所知展示了通过在（111）面SOI空心表面上生长变质InAs / InGaAs QD来外延生长在电信S波段发射的SOI衬底上的第一个无磷InAs QD微盘激光器结构。直径为4 µm的七层InAs QD微型磁盘激光器的激光阈值功率在200 K下测得为234μW。为进行比较，还对生长在GaAs衬底上的相同微型磁盘激光器进行了表征。获得的结果为用于远程通信的片上1.5 µm光源铺平了道路。