All-inorganic perovskite CsPbIBr₂, has drawn much attention for photovoltaic (PV) application due to its excellent intrinsic stability. However, low device performance and high fabrication temperature still hamper its further progress in flexible application. Herein, Zn substitution has been used to improve the nucleation and growth process for low temperature processed a-phase CsPbIBr₂ film. Zn incorporated CsPbIBr₂ film exhibits good crystallinity, compact surface morphology and depressed defect state. Low temperature (100 °C and 160 °C) processed carbon based CsPbIBr₂ solar cells with improved PV performance have been prepared by using Zn incorporation and room deposited electron transport layer (ETL). A champion efficiency over 9% can be achieved through Zn substitution, which is one of the best values reported for the low temperature processed CsPbIBr₂ solar cell without using hole transport layer (HTL). Efficiency over 5% can also be achieved for larger area (1 cm²) rigid and flexible CsPbIBr₂ solar cells. These results would provide a new route for preparing high-performance and low temperature processed inorganic perovsktie solar cell.

全无机钙钛矿CsPbIBr ₂，由于其优异的固有稳定性，已引起光伏（PV）应用的广泛关注。然而，低的器件性能和高的制造温度仍然阻碍了其在灵活应用中的进一步发展。在本文中，Zn替代已用于改善低温处理的a相CsPbIBr ₂膜的成核和生长过程。掺锌的CsPbIBr ₂薄膜具有良好的结晶度，致密的表面形态和凹陷的缺陷状态。低温（100°C和160°C）处理的碳基CsPbIBr ₂通过使用Zn掺入和室温沉积的电子传输层（ETL），可以制备出具有改善的PV性能的太阳能电池。通过锌取代可以达到9％以上的冠军效率，这是低温处理的CsPbIBr ₂太阳能电池不使用空穴传输层（HTL）的最佳值之一。对于更大面积（1 cm ²）的刚性和柔性CsPbIBr ₂太阳能电池，也可以实现5％以上的效率。这些结果将为制备高性能和低温处理的无机perovsktie太阳能电池提供一条新途径。