Abstract Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficiently photovoltaics due to its material advantages and superior optoelectronic properties. In this work, we proposed a facile and versatile method of ball milling followed with spark plasma sintering (SPS) to prepare high-quality Sb2Se3 sputtering target. Then the highly crystalline Sb2Se3 thin film consisted of large crystal grains can be prepared by using radio frequency (RF) magnetron sputtering with an additional post-selenization heat treatment. An efficient substrate structured Sb2Se3 thin film solar cell with configuration of Mo/Sb2Se3/CdS/ITO/Ag was fabricated and a champion device with highly interesting power conversion efficiency (PCE) of 5.08% has been achieved. Superior device performances are closely related to the Sb2Se3 absorber layer with benign growth orientation and the Sb2Se3/CdS heterojunction interface with smooth contact, which induced less recombination loss. The combined features of homemade sputtering target and advantageous thin film preparation technology further demonstrated its attractive application potential in thin film photovoltaic scenarios.

中文翻译：

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Sb2Se3溅射靶的放电等离子体烧结制备高效薄膜太阳能电池

摘要 硒化锑（Sb2Se3）由于其材料优势和优异的光电性能，是一种潜在的环保、低成本光伏吸收材料。在这项工作中，我们提出了一种简便且通用的球磨方法，然后是放电等离子烧结 (SPS)，以制备高质量的 Sb2Se3 溅射靶。然后可以通过使用射频（RF）磁控溅射和额外的硒化后热处理来制备由大晶粒组成的高结晶 Sb2Se3 薄膜。制造了具有 Mo/Sb2Se3/CdS/ITO/Ag 配置的高效衬底结构 Sb2Se3 薄膜太阳能电池，并获得了具有 5.08% 的非常有趣的功率转换效率 (PCE) 的冠军器件。优异的器件性能与具有良性生长取向的 Sb2Se3 吸收层和具有平滑接触的 Sb2Se3/CdS 异质结界面密切相关，从而减少了复合损失。自制溅射靶材的综合特性和优势的薄膜制备技术进一步展示了其在薄膜光伏场景中极具吸引力的应用潜力。