Abstract Integrating oxide materials onto semiconductors is a critical part of the design of new electronic and photonic oxide devices. Sodium niobate (NaNbO3) is a prospective environmentally-friendly antiferroelectric and has received continuous attention in exploring its functionalities for numerously potential applications, particularly in energy-related fields. In this work, integration of antiferroelectric NaNbO3 thin films on wide-bandgap semiconductor 4H-SiC substrates is investigated to take a deep insight into the conduction mechanism. Detailed analysis of current-voltage characteristics suggested the dominance of trap-related space-charge-limited current mechanism in Pt/NaNbO3/4H-SiC devices and the corresponding density of trap states ~2.5 × 1018 cm−3, along with the activation energy ~0.32 eV were determined. Meanwhile, the homogeneous resistance switching behavior was demonstrated in the Pt/NaNbO3/4H-SiC device due to the contribution of the trapping/detrapping of charges, which may facilitate the potential applications in nanoscale electronic devices.

中文翻译：

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直接集成在 4H-SiC 上的反铁电 NaNbO3 薄膜的电学研究

摘要 将氧化物材料集成到半导体上是设计新型电子和光子氧化物器件的关键部分。铌酸钠 (NaNbO3) 是一种有前景的环境友好型反铁电体，在探索其众多潜在应用的功能方面受到持续关注，特别是在能源相关领域。在这项工作中，研究了反铁电 NaNbO3 薄膜在宽带隙半导体 4H-SiC 衬底上的集成，以深入了解传导机制。电流-电压特性的详细分析表明，Pt/NaNbO3/4H-SiC 器件中陷阱相关的空间电荷限制电流机制占主导地位，相应的陷阱态密度~2.5 × 1018 cm-3，以及活化能确定了~0.32 eV。同时，