The steady-state charge-carrier mobility in semiconductors can be extracted from the space-charge-limited current in single-carrier devices. However, in many cases, a built-in voltage is present, which should be known accurately to obtain the correct mobility. Here, it is demonstrated that band bending at the injecting electrode has important consequences for the built-in voltage and the analytical description of the current-voltage characteristics. It is shown that the built-in voltage can be accurately determined from the slope of the current-voltage characteristics on a semilogarithmic scale. Knowing the effect of band bending on the injected current, a simple analytical equation for the drift-diffusion space-charge-limited current above the built-in voltage is derived, which allows for improved determination of the charge-carrier mobility from experimental data.

中文翻译：

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非对称单载波设备中迁移率和内置电压的改进确定

半导体中的稳态载流子迁移率可以从单载流子器件中的空间电荷限制电流中提取。但是，在许多情况下，会存在一个内置电压，为了获得正确的迁移率，应该准确知道该电压。在此证明，在注入电极处的能带弯曲对于内置电压和对电流-电压特性的分析描述具有重要的意义。结果表明，可以根据电流电压特性的斜率在半对数刻度上精确确定内置电压。知道了频带弯曲对注入电流的影响，得出了一个高于内置电压的漂移扩散空间电荷限制电流的简单解析方程，