We have demonstrated an on-wafer fabrication process for AlGaN-based UV-C laser diodes (LDs) with etched mirrors and have achieved lasing for 100 ns pulsed current injection at room temperature. A combined process of dry and wet etching was employed to achieve smooth and vertical AlGaN (1 1 ¯00) facets. These etched facets were then uniformly coated with a distributed Bragg reflector by atomic layer deposition. A remarkable reduction of the lasing threshold current density to 19.6 kA / cm 2 was obtained owing to the high reflectivity of the etched and coated mirror facets. The entire laser diode fabrication process was carried out on a whole 2-in. wafer. We propose this mirror fabrication process as a viable low-cost AlGaN-based UV-C LD production method that is also compatible with highly integrated optoelectronics based on AlN substrates.

中文翻译：

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使用 ALD 沉积 DBR 在晶圆上制造蚀刻镜 UV-C 激光二极管

我们已经展示了一种用于带有蚀刻镜的基于 AlGaN 的 UV-C 激光二极管 (LD) 的晶圆制造工艺，并在室温下实现了 100 ns 脉冲电流注入的激光发射。采用干法和湿法蚀刻的组合工艺来获得光滑和垂直的 AlGaN (1 1 ¯00) 面。然后通过原子层沉积用分布式布拉格反射器均匀地涂覆这些蚀刻的小平面。由于蚀刻和涂层镜面的高反射率，激光阈值电流密度显着降低至 19.6 kA / cm 2。整个激光二极管制造过程是在整个 2 英寸上进行的。晶圆。我们提出这种镜面制造工艺是一种可行的低成本基于 AlGaN 的 UV-C LD 生产方法，它也与基于 AlN 衬底的高度集成光电子学兼容。