We report the growth of InSb/CdTe hetero-epitaxial thin films on the GaAs (111)B substrate using molecular beam epitaxy. The use of (111) orientation enables the fast strain relaxation during the CdTe buffer layer growth, and major crystallographic defects are confined near the CdTe/GaAs interface. Owing to the lattice matching between InSb and CdTe, layer-by-layer 2D growth of InSb is observed from the initial growth stage. Both smooth surface morphology and low defect density of the as-grown InSb/CdTe heterostructures give rise to the enhancement of electron mobility when the InSb layer thickness is reduced below 30 nm as compared to the InSb/GaAs counterparts. The integration of InSb/CdTe highlights the advantage of lattice-matched epitaxial growth and provides a promising approach to design high-quality III–V/II–VI hybrid systems for high-performance device applications.

中文翻译：

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通过分子束外延在 GaAs(111) 衬底上外延生长晶格匹配的 InSb/CdTe 异质结构

我们报告了使用分子束外延在 GaAs (111)B 衬底上生长 InSb/CdTe 异质外延薄膜。(111) 取向的使用能够在 CdTe 缓冲层生长期间实现快速应变弛豫，并且主要的晶体缺陷被限制在 CdTe/GaAs 界面附近。由于 InSb 和 CdTe 之间的晶格匹配，从初始生长阶段观察到 InSb 的逐层二维生长。与 InSb/GaAs 对应物相比，当 InSb 层厚度降低到 30 nm 以下时，生长的 InSb/CdTe 异质结构的光滑表面形态和低缺陷密度都会提高电子迁移率。