We have investigated the photovoltaic action in a ferroelectric semiconductor SbSI with a potentiometry for a multiterminal device under local laser irradiation. The DC-voltage characteristics indicate that the device characteristics are understood to be equivalent to a series circuit composed of dark-resistances for the unirradiated parts and the parallel circuit of a current source and photo-resistance for the irradiated part. The results clearly guide us toward designing photovoltaic and photodetective devices based on ferroelectric materials.We have investigated the photovoltaic action in a ferroelectric semiconductor SbSI with a potentiometry for a multiterminal device under local laser irradiation. The DC-voltage characteristics indicate that the device characteristics are understood to be equivalent to a series circuit composed of dark-resistances for the unirradiated parts and the parallel circuit of a current source and photo-resistance for the irradiated part. The results clearly guide us toward designing photovoltaic and photodetective devices based on ferroelectric materials.

中文翻译：

---

局部光激发下铁电半导体 SbSI 中的非局部光电流

我们已经研究了铁电半导体 SbSI 中的光伏作用，在局部激光照射下，具有多端器件的电位计。直流电压特性表明，器件特性被理解为等效于由未辐照部分的暗电阻和辐照部分的电流源和光电阻的并联电路组成的串联电路。结果清楚地指导我们设计基于铁电材料的光伏和光电检测器件。我们已经研究了铁电半导体 SbSI 中的光伏作用，其中具有局部激光照射下多端器件的电位计。直流电压特性表明，器件特性被理解为等效于由未辐照部分的暗电阻和辐照部分的电流源和光电阻的并联电路组成的串联电路。结果清楚地指导我们设计基于铁电材料的光伏和光电检测装置。