A series of Ruddlesden-Popper-type Srn+1VnO3n+1 (n = 1, 2) (001) epitaxial thin films was grown on LaAlO3 and LaSrGaO4 substrates with tensile and compressive epitaxial strains, respectively. The decrease in VO2 stacking layer number n and the increase in the interlayer distance between the (VO2)n layers resulted in metal-to-insulator transition. The sheet conductance of a single (VO2)n layer in Srn+1VnO3n+1 (n = 1, 2) was close to the well-known Ioffe–Regel limit, which suggests their two-dimensional electrical conduction. From resistivity and magnetoconductance measurements, it is found that renormalized electron–electron interaction and/or the Kondo effect were enhanced with the decrease in n, and possible quantum interference effects like weak localization were induced with the increase in the interlayer distance.A series of Ruddlesden-Popper-type Srn+1VnO3n+1 (n = 1, 2) (001) epitaxial thin films was grown on LaAlO3 and LaSrGaO4 substrates with tensile and compressive epitaxial strains, respectively. The decrease in VO2 stacking layer number n and the increase in the interlayer distance between the (VO2)n layers resulted in metal-to-insulator transition. The sheet conductance of a single (VO2)n layer in Srn+1VnO3n+1 (n = 1, 2) was close to the well-known Ioffe–Regel limit, which suggests their two-dimensional electrical conduction. From resistivity and magnetoconductance measurements, it is found that renormalized electron–electron interaction and/or the Kondo effect were enhanced with the decrease in n, and possible quantum interference effects like weak localization were induced with the increase in the interlayer distance.

中文翻译：

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Ruddlesden-Popper 型 Srn+1VnO3n+1 (n = 1, 2) 外延薄膜中的金属到绝缘体转变作为应变和 VO2 堆叠层数的函数

一系列 Ruddlesden-Popper 型 Srn+1VnO3n+1 (n = 1, 2) (001) 外延薄膜分别生长在具有拉伸和压缩外延应变的 LaAlO3 和 LaSrGaO4 衬底上。VO2 堆叠层数 n 的减少和 (VO2)n 层之间的层间距离的增加导致金属到绝缘体的转变。Srn+1VnO3n+1 (n = 1, 2) 中单个 (VO2)n 层的片电导接近众所周知的 Ioffe-Regel 极限，这表明它们是二维导电的。从电阻率和磁导测量中发现，重整化的电子-电子相互作用和/或近藤效应随着 n 的减小而增强，并且随着层间距离的增加，可能诱发弱局域化等量子干涉效应。一系列 Ruddlesden-Popper 型 Srn+1VnO3n+1 (n = 1, 2) (001) 外延薄膜分别生长在具有拉伸和压缩外延应变的 LaAlO3 和 LaSrGaO4 衬底上。VO2 堆叠层数 n 的减少和 (VO2)n 层之间的层间距离的增加导致金属到绝缘体的转变。Srn+1VnO3n+1 (n = 1, 2) 中单个 (VO2)n 层的片电导接近众所周知的 Ioffe-Regel 极限，这表明它们是二维导电的。从电阻率和磁导测量中发现，重整化的电子-电子相互作用和/或近藤效应随着 n 的减小而增强，并且随着层间距离的增加，可能诱发弱局域化等量子干涉效应。2) (001) 外延薄膜生长在 LaAlO3 和 LaSrGaO4 衬底上，分别具有拉伸和压缩外延应变。VO2 堆叠层数 n 的减少和 (VO2)n 层之间的层间距离的增加导致金属到绝缘体的转变。Srn+1VnO3n+1 (n = 1, 2) 中单个 (VO2)n 层的片电导率接近众所周知的 Ioffe-Regel 极限，这表明它们是二维导电的。从电阻率和磁导测量中发现，重整化的电子-电子相互作用和/或近藤效应随着 n 的减小而增强，并且随着层间距离的增加，可能诱发弱局域化等量子干涉效应。2) (001) 外延薄膜生长在 LaAlO3 和 LaSrGaO4 衬底上，分别具有拉伸和压缩外延应变。VO2 堆叠层数 n 的减少和 (VO2)n 层之间的层间距离的增加导致金属到绝缘体的转变。Srn+1VnO3n+1 (n = 1, 2) 中单个 (VO2)n 层的片电导接近众所周知的 Ioffe-Regel 极限，这表明它们是二维导电的。从电阻率和磁导测量中发现，重整化的电子-电子相互作用和/或近藤效应随着 n 的减小而增强，并且随着层间距离的增加，可能诱发弱局域化等量子干涉效应。