Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors,Crystal Growth & Design

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Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-03-27 , DOI: 10.1021/acs.cgd.0c00144
Ondřej Černohorský ₁ , Jan Grym ₁ , Hana Faitová _{1,

2} , Nikola Bašinová ₁ , Šárka Kučerová _{1,

2} , Roman Yatskiv ₁ , Jozef Veselý ₂

Affiliation

Low temperature solution growth is an attractive method for the preparation of nanostructured semiconductor materials with a wide range of applications from optoelectronics to chemical sensing. Despite the widespread application of low temperature solution growth, basic phenomena taking place during the growth are still under debate. The growth is mostly carried out in batch reactors, which are largely scalable and convenient for applied research and industrial applications. The batch reactors are filled with reactants and sealed, and there is no further inflow of the reactants during the growth. As the growth proceeds, the reactants are depleted, and the growth velocities decrease. Conventionally, the growth process is analyzed in static conditions, where the gradual depletion of the reactants in time is neglected. We analyzed time evolution of the growth of ZnO nanorod arrays on conventional sol–gel seed layers and on GaN substrates patterned by focused ion beam lithography. The focused ion beam lithography allows for precise control of the distances between the nanorods in the arrays. We show that for short growth times the growth is reaction limited, while for longer times the growth regime depends on the distance between the nanorods and changes from reaction limited to diffusion limited as the distance between the nanorods decreases. Under diffusion limited growth conditions, the nanorod height depends on the position within the pattern. The nanorods at the edge of the hexagonal pattern with 19 nanorods in diameter are significantly taller than the nanorods in the center. These experimental observations are validated by the solution of the diffusion equation by a finite element method.

中文翻译：

间歇反应器中ZnO六角形纳米棒阵列溶液生长的建模

低温溶液生长是制备纳米结构半导体材料的一种有吸引力的方法，具有从光电到化学传感的广泛应用。尽管低温溶液生长被广泛应用，但是在生长过程中发生的基本现象仍在争论中。该增长主要在批量反应器中进行，该批量反应器具有很大的可扩展性，并为应用研究和工业应用提供了方便。分批反应器充满反应物并密封，并且在生长过程中没有反应物进一步流入。随着生长的进行，反应物被耗尽，并且生长速度降低。通常，在静态条件下分析生长过程，其中忽略了反应物随时间的逐渐消耗。我们分析了在传统的溶胶-凝胶种子层和通过聚焦离子束光刻形成图案的GaN衬底上ZnO纳米棒阵列生长的时间演化。聚焦离子束光刻允许精确控制阵列中的纳米棒之间的距离。我们表明，对于短的生长时间，生长受到反应的限制，而对于更长的时间，生长机制取决于纳米棒之间的距离，并且随着反应的变化，随着纳米棒之间的距离的减小，扩散受限。在扩散受限的生长条件下，纳米棒的高度取决于图案内的位置。直径为19个纳米棒的六边形图案边缘的纳米棒比中间的纳米棒高得多。

更新日期：2020-03-27

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