Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors,Advanced Electronic Materials

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Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-26 , DOI: 10.1002/aelm.201901079
Joshua N. Arthur ₁ , Mujeeb Ullah Chaudhry ₂ , Maria A. Woodruff _{3,

4} , Ajay K. Pandey _{4,

5} , Soniya D. Yambem _{1,

4}

Affiliation

Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization.

中文翻译：

栅极电导对吸湿绝缘子有机场效应晶体管的影响

吸湿绝缘体场效应晶体管（HIFET）是一类低压操作有机晶体管，已通过修饰栅电极成功地用于生物传感应用。然而，由于栅电极的固有电特性的变化，对栅电极的修改常常导致非理想的晶体管特性。这项工作使用聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）作为模型栅电极来研究HIFET中栅极电导的影响。据揭示，栅极电导的降低导致有效栅极电压的降低，并且在定义HIFET特性中起重要作用。关键性能指标，包括开/关比，阈值电压，跨导，饱和迁移率随栅极电导的增加而增加，一旦达到足够的栅极电导，饱和迁移率就会达到平稳。这种影响归因于当存在栅极泄漏电流时，由于其电阻率而导致沿栅极电极的有效栅极电压降低。这些结果具有广泛的适用性，可作为HIFET器件优化的设计准则。

更新日期：2020-03-26

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