Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits,Advanced Electronic Materials

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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-26 , DOI: 10.1002/aelm.202000026
Silah Lee ₁ , Han Sol Lee ₁ , Sanghyuck Yu ₁ , Ji Hoon Park ₁ , Heesun Bae ₁ , Seongil Im ₁

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Heterojunction PN diode and inverter circuits are fabricated and presented, combining two‐dimensional WSe₂ nanoflake and amorphous InGaZnO (a‐IGZO) thin film on a glass substrate. A heterojunction p‐WSe₂/n‐IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode‐load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n‐FET displays the capability of visible light detection when a reverse‐bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 10⁵ due to the hole doping effect on the WSe₂ nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.

中文翻译：

钨二硫属化物纳米片/ InGaZnO薄膜异质结，用于光电探测器，逆变器和交流整流器电路

结合了二维WSe ₂纳米片和非晶InGaZnO（a-IGZO）薄膜，在玻璃基板上制造并提出了异质结PN二极管和逆变器电路。异质结p-WSe ₂ / n-IGZO二极管具有整流特性，并在反向偏置下有效响应红光（λ= 620 nm）。异质结PN二极管和IGZO场效应晶体管（FET）的结合导致二极管负载逆变器在5 V的电源电压下显示出约12的峰值电压增益。PN二极管和n-FET显示器具有相同的集成度向PN二极管施加反向偏置电压时可见光检测的能力。此外，在PN二极管上进行氧等离子体处理后，其开/关整流比显着提高了≈5×10⁵由于在WSE空穴掺杂效应₂纳米片。这种改进的PN二极管导致与IGZO FET集成在一起的交流整流电路。

更新日期：2020-03-26

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