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A promising p-type Co-ZnFe2O4 nanorod film as a photocathode for photoelectrochemical water splitting.
Chemical Communications ( IF 4.3 ) Pub Date : 2020-04-09 , DOI: 10.1039/d0cc00273a Yayao Lan 1 , Zhifeng Liu , Zhengang Guo , Mengnan Ruan , Xifei Li
Chemical Communications ( IF 4.3 ) Pub Date : 2020-04-09 , DOI: 10.1039/d0cc00273a Yayao Lan 1 , Zhifeng Liu , Zhengang Guo , Mengnan Ruan , Xifei Li
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A p-type Co-ZnFe2O4 film with a one-dimensional (1D) rod-like morphology is fabricated for the first time on fluorine-doped tin oxide (FTO) through a hydrothermal reaction and sintering treatment. The p-type Co-ZnFe2O4 is obtained by doping Co ions into n-type ZnFe2O4, in which Zn sites are substituted by Co. Compared with the n-type ZnFe2O4, the light absorption edge of Co-ZnFe2O4 is clearly shifted from 589 to 624 nm, and the positions of the valence/conduction band of Co-ZnFe2O4 meet the thermodynamic requirements for water splitting. The photocurrent density of p-type Co-ZnFe2O4 is -0.22 mA cm-2 at 0 V vs. the reversible hydrogen electrode (RHE), which is enhanced 7.33-times vs. that of n-type ZnFe2O4 (-0.03 mA cm-2 at 0 V vs. RHE). This work provides useful insights into tuning the p-n character of semiconductors to realize efficient photoelectrochemical (PEC) water splitting.
中文翻译：
一种有前途的p型Co-ZnFe2O4纳米棒膜，用作光电化学水分解的光阴极。
通过水热反应和烧结处理，首次在掺氟氧化锡（FTO）上制备了具有一维（1D）棒状形态的p型Co-ZnFe2O4薄膜。通过将Co离子掺杂到n型ZnFe2O4中获得p型Co-ZnFe2O4，其中Zn位置被Co取代。与n型ZnFe2O4相比，Co-ZnFe2O4的光吸收边缘从589明显转移到624 nm，Co-ZnFe2O4的价/导带位置满足水分解的热力学要求。与可逆氢电极（RHE）相比，p型Co-ZnFe2O4在0 V时的光电流密度为-0.22 mA cm-2，相对于n型ZnFe2O4（-0.03 mA cm-），光电流密度提高了7.33倍。 2在0 V相对于RHE）。
更新日期：2020-03-27
中文翻译：
一种有前途的p型Co-ZnFe2O4纳米棒膜，用作光电化学水分解的光阴极。
通过水热反应和烧结处理，首次在掺氟氧化锡（FTO）上制备了具有一维（1D）棒状形态的p型Co-ZnFe2O4薄膜。通过将Co离子掺杂到n型ZnFe2O4中获得p型Co-ZnFe2O4，其中Zn位置被Co取代。与n型ZnFe2O4相比，Co-ZnFe2O4的光吸收边缘从589明显转移到624 nm，Co-ZnFe2O4的价/导带位置满足水分解的热力学要求。与可逆氢电极（RHE）相比，p型Co-ZnFe2O4在0 V时的光电流密度为-0.22 mA cm-2，相对于n型ZnFe2O4（-0.03 mA cm-），光电流密度提高了7.33倍。 2在0 V相对于RHE）。
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