Ultra-thin two-dimensional semiconducting crystals in their monolayer and few-layer forms show promising aspects in nanoelectronic applications. However, the ultra-thin nature of two-dimensional crystals inevitably results in high contact resistance from limited channel/contact volume as well as device-to-device variability, which seriously limit reliable applications using two-dimensional semiconductors. Here, we incorporate rather thick two-dimensional layered semiconducting crystals for reliable vertical diodes showing excellent Ohmic and Schottky contacts. Using the vertical transport of WSe₂, we demonstrate devices which are functional at various frequency ranges from megahertz AM demodulation of audio signals, to gigahertz rectification for fifth-generation wireless electronics, to ultraviolet–visible photodetection. The WSe₂ exhibits an excellent Ohmic contact to bottom platinum electrode with record-low contact resistance (~50 Ω) and an exemplary Schottky junction to top transparent conducting oxide electrode. Our semitransparent vertical WSe₂ Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication.

单层和几层形式的超薄二维半导体晶体在纳米电子应用中显示出令人鼓舞的方面。但是，二维晶体的超薄特性不可避免地会由于有限的通道/接触体积以及器件间的可变性而导致高接触电阻，这严重限制了使用二维半导体的可靠应用。在这里，我们并入了相当厚的二维分层半导体晶体，用于可靠的垂直二极管，显示出出色的欧姆和肖特基接触。使用WSe ₂的垂直传输，我们演示了在从音频信号的兆赫兹AM解调到第五代无线电子设备的千兆赫兹整流以及紫外可见光检测等各种频率范围内起作用的设备。WSe ₂与底部铂电极之间的接触记录极低（〜50Ω ），与顶部透明导电氧化物电极之间的肖特基结表现出极好的欧姆接触。在第五代无线通信时代，我们的半透明垂直WSe ₂肖特基二极管可能是未来高频电子设备的关键组件。