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Enhanced photocatalytic oxidizing ability via adjusting the band-edge position and oxygen defect concentration of bismuth phosphate
Journal of Alloys and Compounds ( IF 5.8 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.jallcom.2020.154953
Jing Xie , Yali Cao , Dianzeng Jia

Abstract Oxide defect engineering exert huge impact on semiconductor photocatalysis, which not only can adjust the band-gap structure but also can act as electron trap for photoinduced carriers separation. In this work, the photoactivity oxidation capability of bismuth phosphate were enhanced by the fine-tuning of lattice parameters with different oxygen defect concentrations. The non-linear changes of lattice parameters calculated from XRD suggested that the lattice oxygen missed during thermal treatment. XPS, Raman, EPR, HRTEM, PL and UV–vis diffuse reflectance spectroscopy also identified that the types and concentrations of defect changed with various temperatures. The photo-carriers separation efficiency and oxidizability are increased via controllable defect density to adjusting lattice parameters that can attract photogenerated electrons and lower valance band position, respectively. Benefiting from the higher separation efficiency of photogenerated carriers and stronger oxidation capability, the BiPO4 with the smallest lattice parameter exhibited reinforced photocatalytic removal efficiency of methylene blue, better repeatability and stability, which is 3.2 times as high as that of pristine BiPO4. The findings, controlling oxygen vacancy concentration to regulate the lattice parameters, could be a promising strategy for enhancing photoactivity oxidizing ability of photocatalysts.

中文翻译:

通过调节磷酸铋的带边位置和氧缺陷浓度增强光催化氧化能力

摘要 氧化物缺陷工程对半导体光催化产生巨大影响,它不仅可以调节带隙结构,还可以作为光致载流子分离的电子陷阱。在这项工作中,通过微调不同氧缺陷浓度的晶格参数,提高了磷酸铋的光活性氧化能力。从 XRD 计算的晶格参数的非线性变化表明在热处理过程中晶格氧丢失。XPS、拉曼、EPR、HRTEM、PL 和 UV-vis 漫反射光谱也确定了缺陷的类型和浓度随温度的变化而变化。通过可控的缺陷密度来调整可以分别吸引光生电子和较低价带位置的晶格参数,提高了光载流子分离效率和氧化性。得益于光生载流子更高的分离效率和更强的氧化能力,晶格参数最小的 BiPO4 表现出更强的光催化去除亚甲基蓝的效率,更好的重复性和稳定性,是原始 BiPO4 的 3.2 倍。控制氧空位浓度以调节晶格参数的发现可能是增强光催化剂光活性氧化能力的有前途的策略。得益于光生载流子更高的分离效率和更强的氧化能力,晶格参数最小的BiPO4表现出增强的亚甲基蓝光催化去除效率,更好的重复性和稳定性,是原始BiPO4的3.2倍。控制氧空位浓度以调节晶格参数的发现可能是增强光催化剂光活性氧化能力的有前途的策略。得益于光生载流子更高的分离效率和更强的氧化能力,晶格参数最小的 BiPO4 表现出更强的光催化去除亚甲基蓝的效率,更好的重复性和稳定性,是原始 BiPO4 的 3.2 倍。控制氧空位浓度以调节晶格参数的发现可能是增强光催化剂光活性氧化能力的有前途的策略。
更新日期:2020-08-01
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