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In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells
Solar Energy Materials and Solar Cells ( IF 6.3 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.solmat.2020.110518
Qing Yang , Mingdun Liao , Zhixue Wang , Jingming Zheng , Yiran lin , Xueqi Guo , Zhe Rui , Dandan Huang , Linna Lu , Mengmeng Feng , Peihong Cheng , Chunhui Shou , Yuheng Zeng , Baojie Yan , Jichun Ye

Abstract A rapid thermal anneal (RTA) is used to crystallize the plasma-enhanced chemical vapor deposition (PECVD) deposited hydrogenated amorphous silicon (a-Si:H) thin film to form the phosphorus-doped polysilicon passivated contact in tunnel oxide passivated contact (TOPCon) solar cells. The effects of annealing temperature, annealing time, cooling time, and the polysilicon thickness on the surface passivation are investigated. The primary advantage of the RTA is reducing the whole crystallization period to ~15 min, shorter than the conventional tube-furnace annealing period of >60 min. We find that the RTA is a robust method to prepare high-quality polysilicon passivated contact without introducing blistering when the thickness of the a-Si:H is less than 40 nm. The optimized RTA process leads to an implied open-circuit voltage (iVoc) of 712 mV and a single-sided dark saturation current density (J0,s) of 12.5 fA/cm2 in the as-annealed state, which is inferior to the surface passivation of the controlled one prepared by a tube furnace annealing. Fortunately, a subsequent Al2O3 capping hydrogenation improves the iVoc and J0,s to 727 mV and 4.7 fA/cm2, respectively. The champion conversion efficiency of 23.04% (Voc = 679.0 mV, Jsc = 41.97 mA/cm2 and FF = 80.86%) is achieved, which demonstrates the effectiveness of RTA for preparing a high-efficiency polysilicon passivated-contact solar cell.

中文翻译:

使用快速热退火 (RTA) 制备原位掺磷多晶硅及其在多晶硅钝化接触太阳能电池中的应用

摘要 采用快速热退火 (RTA) 方法使等离子增强化学气相沉积 (PECVD) 沉积的氢化非晶硅 (a-Si:H) 薄膜结晶,在隧道氧化物钝化接触中形成掺磷多晶硅钝化接触。 TOPCon) 太阳能电池。研究了退火温度、退火时间、冷却时间和多晶硅厚度对表面钝化的影响。RTA 的主要优点是将整个结晶时间缩短到约 15 分钟,比传统的管式炉退火时间短 > 60 分钟。我们发现,当 a-Si:H 的厚度小于 40 nm 时,RTA 是一种制备高质量多晶硅钝化触点且不会引起起泡的稳健方法。优化的 RTA 工艺导致在退火状态下的隐含开路电压 (iVoc) 为 712 mV 和单侧暗饱和电流密度 (J0,s) 为 12.5 fA/cm2,低于表面通过管式炉退火制备的受控的钝化。幸运的是,随后的 Al2O3 封端氢化将 iVoc 和 J0,s 分别提高到 727 mV 和 4.7 fA/cm2。实现了 23.04% 的最佳转换效率(Voc = 679.0 mV,Jsc = 41.97 mA/cm2 和 FF = 80.86%),这证明了 RTA 在制备高效多晶硅钝化接触太阳能电池方面的有效性。随后的 Al2O3 封端氢化将 iVoc 和 J0,s 分别提高到 727 mV 和 4.7 fA/cm2。实现了 23.04% 的最佳转换效率(Voc = 679.0 mV,Jsc = 41.97 mA/cm2 和 FF = 80.86%),这证明了 RTA 在制备高效多晶硅钝化接触太阳能电池方面的有效性。随后的 Al2O3 封端氢化将 iVoc 和 J0,s 分别提高到 727 mV 和 4.7 fA/cm2。实现了 23.04% 的最佳转换效率(Voc = 679.0 mV,Jsc = 41.97 mA/cm2 和 FF = 80.86%),这证明了 RTA 在制备高效多晶硅钝化接触太阳能电池方面的有效性。
更新日期:2020-06-01
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