In this study, a highly efficient method for chemical mechanical polishing (CMP) of silicon carbide (SiC) substrates using enhanced slurry was proposed and developed. The enhanced slurry contains bubbles of ozone gas generated by ozone gas generator in pure water mixed with a conventional commercially available slurry. Therefore, the enhanced slurry has an oxidizing effect on the Si-face of SiC substrates. To confirm the effectiveness of bubbles enclosing ozone gas, both nano-indentation test and X-ray photoelectron spectroscopy (XPS) analysis were conducted. As a result, the hardness decrease of the Si-face of the SiC substrate was confirmed through the nano-indentation test, and the generation of reaction products was confirmed on Si-face of SiC substrate in the XPS analysis. According to a series of experimental results of our proposed highly efficient CMP method for SiC substrates, the removal rate can be increased when the enhanced slurry was applied, comparing with that for the not only conventional commercially available slurry but also commercially available dedicated slurry.

在这项研究中，提出并开发了一种使用增强浆料对碳化硅（SiC）基板进行化学机械抛光（CMP）的高效方法。增强的浆料在与常规的市售浆料混合的纯水中包含由臭氧气体发生器产生的臭氧气体的气泡。因此，增强的浆料对SiC衬底的Si面具有氧化作用。为了确认包围臭氧气体的气泡的有效性，进行了纳米压痕测试和X射线光电子能谱（XPS）分析。结果，通过纳米压痕测试证实了SiC衬底的Si表面的硬度降低，并且在XPS分析中证实了在SiC衬底的Si表面上反应产物的产生。