The thin films of Ti_0.9F_0.1-xCr_xO₂ (x = 0.0, 0.02, 0.04, 0.06, 0.08, 0.1) have been deposited on Si (100) substrate by pulsed laser deposition (PLD) technique at substrate temperature of 630ᶱC. The deposition time was 60 min. The synthesized samples have been characterized by X-Ray diffractometer (XRD) for structural study, Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) for surface analysis, EDX for elemental composition, Vibrating sample magnetometer (VSM) for magnetic properties, Spectroscopic ellipsometry (SE) for optical properties and four probe Hall effect measurements for electrical properties. Structural analysis revealed pure phase of rutile without any secondary peak. AFM and SEM measurements revealed decrease in crystallinity and increase in grain size. Magnetic characterization showed ferromagnetic behavior for all thin films at room temperature. Optical characterization revealed red shift in band gap energy with increasing amount of Cr concentration. Semiconducting behavior with n- type carriers is observed from electrical measurements.

Ti _0.9 F _0.1-x Cr _x O ₂的薄膜（x = 0.0、0.02、0.04、0.06、0.08、0.1）已通过脉冲激光沉积（PLD）技术在630°C的衬底温度下沉积在Si（100）衬底上。沉积时间为60分钟。合成样品的特征在于用于结构研究的X射线衍射仪（XRD），用于表面分析的原子力显微镜（AFM）和扫描电子显微镜（SEM），用于元素成分的EDX，用于磁性能的振动样品磁力计（VSM），光谱椭圆仪（SE）用于光学特性，四探针霍尔效应测量用于电特性。结构分析显示纯金红石相，没有任何次要峰。原子力显微镜和扫描电镜测量显示结晶度降低，晶粒尺寸增加。磁性表征显示了所有薄膜在室温下的铁磁行为。光学特征表明，随着Cr浓度的增加，带隙能量发生红移。从电学测量中可以观察到n型载流子的半导体行为。