The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

中文翻译：

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在轴（001）硅上外延生长的中红外激光二极管

为了实现有源光子集成电路，积极地寻求在标准的，兼容CMOS的同轴（001）Si衬底上进行III-V半导体激光器的直接外延生长。在这里，我们报道了在轴Si衬底上外延生长的第一台中红外半导体激光器，即与行业标准兼容。此外，这些基于GaSb的激光二极管具有较低的阈值电流密度，较低的光损耗，高温运行和较高的特征温度。这些结果代表了在用于智能传感器的Si上集成半导体激光源的突破。