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Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon
Optica ( IF 8.4 ) Pub Date : 2020-03-26 , DOI: 10.1364/optica.388383
Marta Rio Calvo , Laura Monge Bartolomé , Michaël Bahriz , Guilhem Boissier , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié

The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

中文翻译:

在轴(001)硅上外延生长的中红外激光二极管

为了实现有源光子集成电路,积极地寻求在标准的,兼容CMOS的同轴(001)Si衬底上进行III-V半导体激光器的直接外延生长。在这里,我们报道了在轴Si衬底上外延生长的第一台中红外半导体激光器,即与行业标准兼容。此外,这些基于GaSb的激光二极管具有较低的阈值电流密度,较低的光损耗,高温运行和较高的特征温度。这些结果代表了在用于智能传感器的Si上集成半导体激光源的突破。
更新日期:2020-03-26
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