In this work, the influence of anion composition on the photoresponse characteristics of zinc oxynitride thin film transistors is investigated and compared directly to conventional In-Ga-Zn-O TFTs. Increasing the ratio of N to (N+O) led to higher field effect mobility and improved subthreshold swing. The subgap density of states extracted by monochromatic photonic capacitance-voltage measurement indicated that the nitrogen-related defect states, such as nitrogen vacancies, increased with increasing nitrogen gas flow rate. Furthermore, the photoconductivity mechanism of ZnON TFTs is discussed in detail.

中文翻译：

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氮含量对氮氧化锌薄膜晶体管持久光电导率的影响

在这项工作中，研究了阴离子组成对氧氮化锌薄膜晶体管光响应特性的影响，并直接与传统的 In-Ga-Zn-O TFT 进行了比较。增加 N 与 (N+O) 的比率导致更高的场效应迁移率和改善的亚阈值摆动。通过单色光子电容-电压测量提取的子能隙密度表明氮相关缺陷状态，如氮空位，随着氮气流量的增加而增加。此外，详细讨论了 ZnON TFT 的光电导机制。