In this work, we studied the effects of post annealing process on the electrical performance and positive bias stability (PBS) of aluminum-zinc-oxide (AZO) thin film transistors (TFTs). Among all the devices, the TFT annealed in vacuum atmosphere exhibits excellent I-V characteristics, such as a saturation mobility ( $\mu _{{{\text {sat}}}}$ ) of 45.90 cm²/ $\text{V}\cdot \text{s}$ , a steep subthreshold swing of 263 mV/decade, a high $\text{I}_{{ \mathrm{\scriptscriptstyle ON}}}/\text{I}_{{ \mathrm{\scriptscriptstyle OFF}}}$ ratio of $7.56\times 10^{{{{8}}}}$ because of its excellent film quality. In addition, the positive bias stability of TFTs annealed in different atmosphere under positive bias (+5V, 2000s) were also conveyed. The threshold voltage shift ( $\Delta \text{V}_{{{\text {th}}}}$ ) was 0.3V (mixed gas, Ar:O₂ = 3:3), 0.9V (vacuum), 1.0V (O₂). These results can be explained by the $\text{O}_{{{\text {II}}}} /\text{O}_{{{\text {total}}}}$ of the AZO films. The AZO film annealed in mixed gas (Ar:O₂ = 3:3) has the least oxygen vacancy density that leads to the least $\Delta \text{V}_{{\mathbf {th}}}$ under positive bias.

中文翻译：

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后退火工艺对Al-Zn-O薄膜晶体管电性能和稳定性的影响

在这项工作中，我们研究了后退火工艺对铝锌氧化物 (AZO) 薄膜晶体管 (TFT) 的电气性能和正偏置稳定性 (PBS) 的影响。在所有器件中，在真空气氛中退火的 TFT 表现出优异的 IV 特性，如饱和迁移率 ( $\mu _{{{\text {sat}}}}$ ) 45.90 厘米² / $\text{V}\cdot \text{s}$ ，陡峭的亚阈值摆幅为 263 mV/decade，高 $\text{I}_{{ \mathrm{\scriptscriptstyle ON}}}/\text{I}_{{ \mathrm{\scriptscriptstyle OFF}}}$ 比率 $7.56\times 10^{{{{8}}}}$ 由于其出色的电影质量。此外，还传达了在正偏压（+5V，2000s）下在不同气氛下退火的TFT的正偏压稳定性。阈值电压偏移 ( $\Delta \text{V}_{{{\text {th}}}}$ ) 为 0.3V（混合气体，Ar:O ₂ = 3:3）、0.9V（真空）、1.0V（O ₂）。这些结果可以解释为 $\text{O}_{{{\text {II}}}} /\text{O}_{{{\text {total}}}}$ AZO 薄膜。在混合气体 (Ar:O ₂ = 3:3) 中退火的 AZO 薄膜具有最小的氧空位密度，导致最少的 $\Delta \text{V}_{{\mathbf {th}}}$ 在正偏差下。