In this letter, we propose the photo-responsible synaptic devices by using stackable GaAs photodetectors (PDs) and Ge-on-insulator (Ge-OI) synaptic transistors for the future three-dimensional (3D) artificial vision sensors. The photo-responsible synapse showed good photo-responding synaptic behaviors depending on the incident light to GaAs PD, which changes the hole injection into the Ge-OI transistors, resulting in the change in potentiation/depression characteristics. The training simulation highlighted the fabricated photo-responsible synapse can provide high colored pattern recognition tasks for semiconductor-based hardware systems.

中文翻译：

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使用 Ge 突触晶体管和 GaAs 光电探测器的光敏突触

在这封信中，我们通过使用可堆叠的 GaAs 光电探测器 (PD) 和绝缘体上的锗 (Ge-OI) 突触晶体管，为未来的三维 (3D) 人工视觉传感器提出了光响应突触器件。光响应突触显示出良好的光响应突触行为，这取决于 GaAs PD 的入射光，这改变了注入 Ge-OI 晶体管的空穴，导致增强/抑制特性的变化。训练模拟强调了制造的光负责突触可以为基于半导体的硬件系统提供高色彩模式识别任务。