Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial temperature range from 5 °C to 90 °C. The implementation is robust to process variation, requires 357 μW when active, and is optimized for duty cycling to reduce system energy consumption.

中文翻译：

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具有 11 位分辨率的 CMOS 温度稳定二维机械应力传感器


使用未经修改的 130 nm CMOS 工艺，我们展示了集成 2D CMOS 应力传感器的设计和微调方法，可实现 11 位分辨率和 66 dB 动态范围。仅 n 阱主传感元件和 p 型辅助元件允许在 5 °C 至 90 °C 的商业温度范围内对应力大小和角度进行后校准测量。该实现对工艺变化具有鲁棒性，激活时需要 357 μW，并针对占空比进行了优化，以降低系统能耗。