In modern power delivery systems, there has been an up-rising trend of migrating conventional two-stage dc–dc power conversion architecture to a single-stage one, in order to accomplish better efficiency and power density. In response to such a trend, this article presents a gallium nitride (GaN)-based power converter design that achieves direct 48-/1-V dc–dc power conversion with a single-stage double step-down (DSD) architecture. Operating at 2 MHz, it pushes the equivalent minimum duty ratio to a record low level of 2.1%. In order to improve closed-loop regulation, an adaptive ON- and OFF-time (AO2T) control with elastic ON-time modulation is proposed for both steady-state and transient response enhancement. For reinforced reliability in the dual-phase operation, a master-phase mirroring technique enables adaptive master–slave phase operation, accomplishing automatic phase current balancing. An IC prototype is implemented on a 180-nm high voltage (HV) bipolar, CMOS DMOS (BCD) process, with an active die area of 1.46 mm2. It achieves peak efficiencies of 85.4%, 79%, and 56.8% at 100 kHz, 250 kHz, and 2 MHz, respectively.

中文翻译：

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具有双降压架构和主从 AO²T 控制的直接 48-/1-V GaN 基 DC-DC 电源转换器

在现代电力传输系统中，为了实现更高的效率和功率密度，将传统的两级 DC-DC 电源转换架构迁移到单级电源转换架构呈上升趋势。针对这一趋势，本文提出了一种基于氮化镓 (GaN) 的电源转换器设计，该设计可通过单级双降压 (DSD) 架构实现直接 48-/1-V dc-dc 电源转换。它以 2 MHz 运行，将等效最小占空比推至 2.1% 的创纪录低水平。为了改善闭环调节，提出了一种具有弹性导通时间调制的自适应导通和关断时间 (AO2T) 控制，用于增强稳态和瞬态响应。为了增强双相操作的可靠性，主相位镜像技术可实现自适应主从相位操作，实现自动相电流平衡。IC 原型采用 180 纳米高压 (HV) 双极型 CMOS DMOS (BCD) 工艺，有效芯片面积为 1.46 平方毫米。它在 100 kHz、250 kHz 和 2 MHz 下分别实现了 85.4%、79% 和 56.8% 的峰值效率。