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Leakage and swell in emulsion liquid membrane systems: Comparing continuous stirred-tank reactor and batch experiments
Journal of Industrial and Engineering Chemistry ( IF 5.9 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.jiec.2020.03.013
Randolph M. Pfeiffer , Annette L. Bunge

Abstract Emulsion liquid membrane (ELM) systems can efficiently extract and concentrate dilute solutes in a variety of applications and chemistries. Internal phase leakage and swell reduce extraction efficiency and concentration, which limits their use. Nearly all studies of ELM leakage and swell have been conducted in batch systems, although continuous flow systems are preferred for industrial applications. The objective of this investigation was to assess the ability of batch experiments to predict continuous system performance with respect to internal phase leakage and swell. The effects of five factors (surfactant concentration, osmotic pressure, membrane viscosity, internal phase volume fraction, and extraction vessel stir rate) on leakage and swell were measured in a continuous stirred-tank reactor (CSTR) system without solute extraction. The results were compared with those reported previously for a batch system with the same experimental conditions and vessel geometry. Overall, the effects of the five factors in the CSTR system are qualitatively consistent with the batch system observations, suggesting that the influential variables in the batch system are similarly influential in the CSTR system. Leakage and swell in the CSTR and batch systems are correlated with similar amounts of swell in both systems but consistently smaller leakage in the CSTR configuration.

中文翻译:

乳液液膜系统的泄漏和溶胀:比较连续搅拌釜反应器和间歇实验

摘要 乳液液膜 (ELM) 系统可以有效地提取和浓缩各种应用和化学中的稀溶质。内相泄漏和膨胀会降低萃取效率和浓度,从而限制了它们的使用。几乎所有关于 ELM 泄漏和膨胀的研究都是在批处理系统中进行的,尽管连续流动系统是工业应用的首选。本次调查的目的是评估批量实验预测系统内相泄漏和溶胀的连续性能的能力。在没有溶质萃取的连续搅拌釜反应器 (CSTR) 系统中测量了五个因素(表面活性剂浓度、渗透压、膜粘度、内相体积分数和萃取容器搅拌速率)对泄漏和溶胀的影响。结果与先前报告的具有相同实验条件和容器几何形状的批处理系统的结果进行了比较。总体而言,CSTR 系统中五个因素的影响与批处理系统观察到的定性一致,表明批处理系统中的影响变量在 CSTR 系统中具有类似的影响。CSTR 和批处理系统中的泄漏和膨胀与两种系统中类似的膨胀量相关,但 CSTR 配置中的泄漏始终较小。表明批处理系统中的影响变量在 CSTR 系统中具有类似的影响。CSTR 和批处理系统中的泄漏和膨胀与两种系统中类似的膨胀量相关,但 CSTR 配置中的泄漏始终较小。表明批处理系统中的影响变量在 CSTR 系统中具有类似的影响。CSTR 和批处理系统中的泄漏和膨胀与两种系统中类似的膨胀量相关,但 CSTR 配置中的泄漏始终较小。
更新日期:2020-07-01
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