Chromium nitride (CrN) thin films with strong (111, 200) diffraction peaks have been produced using an ammonolysis-free atmospheric pressure plasma process. The sol-gel derived thin films are deposited on quartz that has been bombarded with atmospheric pressure plasma, produced using axial N₂ (99.995%) at 1100 W or axial forming gas (N₂/H₂ = 9) at 700 W to 1000 W for 10 min. In addition, dichromium nitride (Cr₂N) thin films with intense (002, 111) diffraction peaks have been formed using atmospheric pressure plasma made from axial forming gas (N₂/H₂ = 9) at 1100 W for 10 min. A dense morphology was observed in the CrN thin films. In comparison, a porous morphology was observed in the Cr₂N thin films, which can be explained by the release of nitrogen during the phase transformation. This atmospheric pressure plasma process, which does not require the traditional ammonolysis, offers an effective route toward chromium nitride thin films.

使用无氨解的大气压等离子体工艺已生产出具有强（111，200）衍射峰的氮化铬（CrN）薄膜。溶胶-凝胶衍生的薄膜沉积在石英上，该石英已被大气压等离子体轰击，使用1100 W的轴向N ₂（99.995％）或 700 W至1000的轴向形成气体（N ₂ / H ₂ = 9）生产W 10分钟。另外，已经使用由轴向形成气体（N ₂ / H _2）制成的大气压等离子体形成了具有强烈的（002、111）衍射峰的氮化铬（Cr ₂ N）薄膜。 = 9）在1100 W下持续10分钟。在CrN薄膜中观察到致密的形态。相比之下，在Cr ₂ N薄膜中观察到多孔形态，这可以通过相变过程中氮的释放来解释。该大气压等离子体工艺不需要传统的氨解反应，提供了一条通向氮化铬薄膜的有效途径。