Engineering Metal-spxy Dirac Bands on the Oxidized SiC Surface.,Nano Letters

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Engineering Metal-spxy Dirac Bands on the Oxidized SiC Surface.
Nano Letters ( IF 9.6 ) Pub Date : 2020-04-01 , DOI: 10.1021/acs.nanolett.0c01111
Felipe Crasto de Lima ₁ , Roberto H Miwa ₁

Affiliation

The ability to construct 2D systems, beyond materials' natural formation, enriches the search and control capability of new phenomena, for instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study, we demonstrate that metal atoms encaged in a silicate adlayer on silicon carbide is an interesting platform for lattice design, providing a ground to experimentally construct tight-binding models on an insulating substrate. Based on the density functional theory, we have characterized the energetic and electronic properties of 2D metal lattices embedded in the silica adlayer. We show that the characteristic band structures of those lattices are ruled by surface states induced by the metal-s orbitals coupled by the host-pxy states, giving rise to spxy Dirac bands neatly lying within the energy gap of the semiconductor substrate.

中文翻译：

在氧化的SiC表面上工程化金属-狄拉克带。

除了材料自然形成之外，构建2D系统的能力还丰富了新现象的搜索和控制能力，例如，通过扫描隧道显微镜在金属表面上空位的拓扑晶格的合成。在本研究中，我们证明了在碳化硅上的硅酸盐层中包裹的金属原子是用于晶格设计的有趣平台，为在绝缘基板上实验构造紧密结合模型提供了基础。基于密度泛函理论，我们表征了嵌入二氧化硅层中的二维金属晶格的能量和电子性质。我们表明，这些晶格的特征能带结构是由由金属-s轨道和主-pxy态耦合的表面态决定的，

更新日期：2020-03-26

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