Nanostructuring Co3O4 to Tune Capacitive Behaviors: From Low to High Dimensions,ChemistrySelect

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Nanostructuring Co3O4 to Tune Capacitive Behaviors: From Low to High Dimensions
ChemistrySelect ( IF 1.9 ) Pub Date : 2020-03-25 , DOI: 10.1002/slct.201904533
Pingping Yang _{1,

2} , Fengkai Wu ₁ , Liuliu Wang ₁ , Xiaoying Chen ₁ , Jiale Xie _{1,

2}

Affiliation

Pseudocapacitance is mainly contributed by fast surface‐controlled reactions. However, the effect of nanostructures on the capacitive behaviour has not been systematically studied yet. In this work, we synthesize different Co₃O₄ nanostructures with the same crystal structure and exposed clean crystal planes that include 1D nanowire, 2D nanosheet, 3D rambutan‐like and hierarchical structures, ranging from low to high dimensions. It is discovered the specific capacitance of Co₃O₄ materials follows the order of 1D nanowire > hierarchical structure > 2D nanosheet > 3D rambutan‐like structure while the electron transfer resistance is 1D nanowire < 2D nanosheet < hierarchical structure < 3D rambutan‐like structure. Under the same electrochemistry, results suggest the pseudocapacitance is not simply dependent on the surface area offered by the nanostructure, but relies on the conductivity, accessibility, diffusion rate and reactivity of the electrode. 1D nanostructure can render the highest reactant accessibility, fastest electron transfer and largest diffusion rate, thus achieving the highest specific pseudocapacitance.

中文翻译：

纳米结构化Co3O4以调节电容性能：从低到高

伪电容主要是由快速的表面控制反应引起的。然而，尚未系统研究纳米结构对电容行为的影响。在这项工作中，我们合成了具有相同晶体结构和裸露的干净晶面的不同Co ₃ O ₄纳米结构，包括从低到高尺寸的1D纳米线，2D纳米片，3D红毛丹样和分层结构。发现Co ₃ O ₄的比电容材料遵循1D纳米线>分层结构> 2D纳米片> 3D红毛丹状结构的顺序，而电子传递阻力为1D纳米线<2D纳米片<分层结构<3D红毛丹状结构。在相同的电化学条件下，结果表明假电容不仅取决于纳米结构所提供的表面积，还取决于电极的电导率，可及性，扩散速率和反应性。一维纳米结构可提供最高的反应物可及性，最快的电子转移和最大的扩散速率，从而实现最高的比拟电容。

更新日期：2020-03-26

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