Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young's modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V-1∙s-1), and high thermal (5000 Wm-1∙K-1) and superior electrical conductivity (1.0 × 106 S∙m-1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

中文翻译：

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基于石墨烯材料的忆阻非易失性存储器。


电阻式随机存取存储器（RRAM）被认为是最有前途的下一代非易失性存储器（NVM）器件之一，也是忆阻器技术的代表，在神经形态系统行业中表现出作为人工突触的巨大潜力人工智能（AI）具有运算速度快、功耗低、设备密度高等优点。石墨烯和相关材料（GRM），特别是氧化石墨烯（GO），作为RRAM器件的活性材料，被认为是金属氧化物和钙钛矿材料等其他材料的有前途的替代品。本文概述了基于 GRM 的 RRAM 器件，讨论了 GRM 的特性、电阻开关 (RS) 行为的主要操作机制、品质因数 (FoM) 总结​​以及基于 GRM 的 RRAM 器件的前景扩展。具有优异的物理和化学优势，如本征杨氏模量（1.0 TPa）、良好的拉伸强度（130 GPa）、优异的载流子迁移率（2.0 × 105 cm2∙V-1∙s-1）和高耐热（5000 Wm-1∙） K-1) 和优异的导电性 (1.0 × 106 S∙m-1)，GRM 可以充当 RRAM 器件中的电极和电阻开关介质。此外，电极和电介质之间基于GRM的界面可以对电介质中的原子扩散限制和表面效应抑制产生影响。大量具体研究表明，GRM可能在促进RRAM器件大规模商业化方面发挥重要作用。