Abstract Cu-doped Bi2Te3 thin films were deposited on Si wafer, glass, and polyimide substrates at 200 °C using magnetron sputtering. During the deposition process, it is confirmed that thermal stress occurred at the films due to the mismatch of the coefficient of thermal expansion between the films and the substrates. As substrates with different coefficients of thermal expansion were used, the changes of crystal growth, morphologies, and thermoelectric properties of the Cu-doped Bi2Te3 thin films were investigated.

中文翻译：

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用于柔性热电应用的 Cu 掺杂 Bi2Te3 薄膜的应力诱导变化

摘要 使用磁控溅射在 200 °C 下在 Si 晶片、玻璃和聚酰亚胺基板上沉积 Cu 掺杂的 Bi2Te3 薄膜。在沉积过程中，确认由于薄膜和基板之间的热膨胀系数不匹配而在薄膜上产生了热应力。由于采用不同热膨胀系数的衬底，研究了Cu掺杂Bi2Te3薄膜的晶体生长、形貌和热电性能的变化。