Abstract Nanostructured transition metal dichalcogenide (TMDs) materials exhibit promising potential in next-generation optoelectronic devices and catalysts. TMDs possess chemically inert basal planes and catalytically active edge sites, with the relative population of the latter being a decisive factor for tailoring the structural, chemical and electronic properties of such nanostructures. In virtually all applications, TMD-based assemblies must be interfaced with other materials (such as graphitic domains in an electrode). During the in situ growth of MoS2 nanostructures in the presence of oxygen-doped graphitic materials, the formation of amorphous and/or crystalline Mo-based species could influence the chemical environment and electronic properties of the composites. In this study a detailed investigation of both graphene oxide (GO) and reduced graphene oxide (rGO) with MoSxOy composites were studied for the first time with X-ray and ultra-violet photoelectron spectroscopies (XPS/UPS). The composites were obtained upon gradual heating of GO and rGO with ammonium tetrathiomolubdate (ATTM) hybrid films in Ultra High Vacuum where Mo6+, Moa+ (5 ≤ a

中文翻译：

---

石墨烯-MoSx 复合材料的电子特性和化学相互作用研究

摘要 纳米结构的过渡金属二硫属化物 (TMD) 材料在下一代光电器件和催化剂中表现出巨大的潜力。TMD 具有化学惰性的基面和催化活性边缘位点，后者的相对数量是定制此类纳米结构的结构、化学和电子特性的决定性因素。在几乎所有应用中，基于 TMD 的组件必须与其他材料（例如电极中的石墨域）连接。在掺氧石墨材料存在下 MoS2 纳米结构的原位生长过程中，非晶和/或结晶 Mo 基物种的形成会影响复合材料的化学环境和电子特性。在这项研究中，首次使用 X 射线和紫外光电子光谱 (XPS/UPS) 对氧化石墨烯 (GO) 和还原氧化石墨烯 (rGO) 与 MoSxOy 复合材料进行了详细研究。通过在超高真空中逐渐加热 GO 和 rGO 与四硫代钼酸铵 (ATTM) 杂化膜，其中 Mo6+、Moa+ (5 ≤ a