Abstract Transition metals used in semiconductor, photolithography and fusion applications interact with low energy oxygen ions. Understanding erosion, the nature of the formed oxide and depth of oxygen transport is necessary in mitigating unexpected performance of sensors, optics or plasma facing components. Oxide formation is governed by both the ion–target combination and the incident ion energy. We study the interaction of the transition metals molybdenum, ruthenium, palladium and tungsten, with oxygen ions in the energy region of 50–500 eV. Near-threshold sputtering of metals was experimentally measured and compared to predictions by the Monte Carlo code TRIDYN. Compositional changes and oxide thicknesses following sputtering were measured using Angle resolved X-ray photoelectron spectroscopy and subsequently compared to limiting oxide formed by atomic oxygen exposures. Sputter yields in some cases (ruthenium) were found to be sensitive to ion beam impurities such as ozone ( 1% of background gas) leading to chemical sputtering. Ion induced oxide thicknesses (for molybdenum and tungsten) were found to be larger than those predicted by ballistic transport where sputtering is balanced by implantation. It is hypothesized that radiation enhanced diffusion of free oxygen leads to thicker oxide films at low ion energies.

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氧离子与过渡金属的近阈值稳态相互作用：溅射和辐射增强扩散

摘要 半导体、光刻和聚变应用中使用的过渡金属与低能氧离子相互作用。了解侵蚀、形成的氧化物的性质和氧传输的深度对于减轻传感器、光学器件或面向等离子体的组件的意外性能是必要的。氧化物的形成受离子-靶标组合和入射离子能量的控制。我们研究了过渡金属钼、钌、钯和钨与能量范围为 50-500 eV 的氧离子的相互作用。金属的近阈值溅射通过实验测量并与蒙特卡罗代码 TRIDYN 的预测进行比较。使用角分辨 X 射线光电子能谱测量溅射后的成分变化和氧化物厚度，然后与原子氧暴露形成的限制性氧化物进行比较。发现在某些情况下（钌）的溅射产额对离子束杂质敏感，例如臭氧（背景气体的 1%），导致化学溅射。发现离子诱导的氧化物厚度（对于钼和钨）大于弹道传输预测的那些，其中溅射通过注入平衡。据推测，辐射增强游离氧的扩散导致在低离子能量下更厚的氧化膜。发现离子诱导的氧化物厚度（对于钼和钨）大于弹道传输预测的那些，其中溅射通过注入平衡。据推测，辐射增强游离氧的扩散导致在低离子能量下更厚的氧化膜。发现离子诱导的氧化物厚度（对于钼和钨）大于弹道传输预测的那些，其中溅射通过注入平衡。据推测，辐射增强游离氧的扩散导致在低离子能量下更厚的氧化膜。