Abstract Anisotropic Si nano-trench structures were fabricated using inductively coupled HBr + Cl2 plasmas for sidewall etching residue analysis. The sidewall etching residues formed inside the Si nano-trench patterns were analyzed via tilted X-ray photoelectron spectroscopy. The changes in the chemical composition and binding state of the etching residues formed on the Si nano-trench sidewalls were investigated with various gas mixing ratios in HBr + Cl2 plasma etching processes. The sidewall chemistry of the plasma-etched Si nano-trench patterns was examined at various take-off angles. SiO2 and suboxide groups (SixOy, x ≤ 2, y ≤ 3) were formed on the Si nano-trench sidewalls after the plasma etching. An increase in the chlorine content of the gas plasma resulted in the increased formation of SiO2 and suboxide residual groups on the Si nano-trench sidewalls. Additionally, the changes in the chemical states of the Si nano-trench sidewalls after a wet-cleaning process were examined using our designed experimental technique.

中文翻译：

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硅各向异性等离子刻蚀后上侧壁刻蚀残留特征

摘要 使用电感耦合 HBr + Cl2 等离子体制造各向异性 Si 纳米沟槽结构，用于侧壁蚀刻残留物分析。通过倾斜 X 射线光电子能谱分析在 Si 纳米沟槽图案内部形成的侧壁蚀刻残留物。研究了HBr+Cl2等离子蚀刻工艺中不同气体混合比下Si纳米沟槽侧壁上形成的蚀刻残留物的化学成分和结合状态的变化。在不同的起飞角度检查等离子体蚀刻的 Si 纳米沟槽图案的侧壁化学成分。等离子刻蚀后，在硅纳米沟槽侧壁上形成了SiO2和低氧基团（SixOy，x≤2，y≤3）。气体等离子体中氯含量的增加导致在 Si 纳米沟槽侧壁上形成的 SiO2 和低价氧化物残留基团的增加。此外，使用我们设计的实验技术检查了湿法清洁工艺后硅纳米沟槽侧壁化学状态的变化。