Abstract Porous SiC film is an excellent electrode material for robust micro-supercapacitors used in extremely harsh environments. In one of our previous studies, porous 3C–SiC film with high areal capacitance and high deposition rate was prepared via laser chemical vapor deposition (LCVD). However, it is still urgent to explore the formation mechanism of porous structures using LCVD. In this study, the microstructure of the porous cubic SiC film prepared via LCVD was analyzed in detail using scanning and transmission electron microscopy techniques. The growth mechanism of the deposits has been proposed according to the “growth competing theory” and “shadow effect theory.”

中文翻译：

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激光化学气相沉积制备多孔3C-SiC薄膜的生长机理

摘要 多孔碳化硅薄膜是一种优异的电极材料，可用于极端恶劣环境中使用的坚固微型超级电容器。在我们之前的一项研究中，通过激光化学气相沉积 (LCVD) 制备了具有高面积电容和高沉积速率的多孔 3C-SiC 薄膜。然而，利用LCVD探索多孔结构的形成机制仍是当务之急。在这项研究中，使用扫描和透射电子显微镜技术详细分析了通过 LCVD 制备的多孔立方 SiC 膜的微观结构。根据“生长竞争理论”和“影子效应理论”提出了矿床的生长机理。