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From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions
Science Bulletin ( IF 18.8 ) Pub Date : 2020-03-23 , DOI: 10.1016/j.scib.2020.03.035
Ce Hu 1 , Dong Zhang 2 , Faguang Yan 2 , Yucai Li 1 , Quanshan Lv 1 , Wenkai Zhu 1 , Zhongming Wei 3 , Kai Chang 3 , Kaiyou Wang 3
Affiliation  

Different than covalently bonded magnetic multilayer systems, high-quality interfaces without dangling bonds in van der Waals (vdW) junctions of two-dimensional (2D) layered magnetic materials offer opportunities to realize novel functionalities. Here, we report the fabrication of multi-state vertical spin valves without spacer layers by using vdW homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers. We demonstrate the typical behavior of two-state and three-state magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes, respectively. Distinct from traditional spin valves with sandwich structures, our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices. Our work demonstrates the possibility of extend multi-state, non-volatile spin information to 2D magnetic homo-junctions, and it emphasizes the utility of vdW interface as a fundamental building block for spintronic devices.



中文翻译:

基于 Fe3GeTe2 范德瓦尔斯同质结的无间隔层的双态到多态垂直自旋阀

与共价键合的磁性多层系统不同,二维 (2D) 层状磁性材料的范德华 (vdW) 结中没有悬挂键的高质量界面提供了实现新功能的机会。在这里,我们报告了通过使用 vdW 同质结制造没有间隔层的多态垂直自旋阀,其中剥离的 Fe 3 GeTe 2纳米薄片充当铁磁电极和/或夹层。我们展示了具有两个和三个 Fe 3 GeTe 2的器件的两态和三态磁阻的典型行为纳米薄片,分别。与具有三明治结构的传统自旋阀不同,我们新颖的基于同质结的自旋阀结构允许直接实现多态磁性器件。我们的工作展示了将多态、非易失性自旋信息扩展到 2D 磁性同质结的可能性,并强调了 vdW 接口作为自旋电子器件基本构建块的实用性。

更新日期:2020-03-23
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