Abstract We report the study of resistivity and transverse magnetoresistance of LaB6 and R0.01La0.99B6 diluted systems (R–Ce, Pr, Nd, Eu, Gd, and Ho) measured at temperatures between 1.8 K and 300 K in magnetic fields up to 82 kOe. Our data allow us to observe the influence of a wide class of impurities on the transport properties of LaB6 host material accompanied by various interesting anomalies including a crossover from positive (R–La, Pr, Nd, Eu, and Gd) to negative (R–Ce, Ho) regime of magnetoresistance below inversion points. The temperature dependences of zero-field resistivity are shown to be well described by a sum of (i) Debye term from rigid boron cages (ΘD ≈ 1160 K) and (ii) the contribution from quasilocal vibrations of La3+ ions (ΘE1 ≈ 154–156 К and ΘE2 ≈ 320–340 К). We register a low-T rise of resistivity for the materials containing R–Ce, Pr, Nd, and Ho centers. It is found that instead of logarithmic behavior ρ(T)~−lnT, predicted by Kondo model, the scattering on magnetic impurities follows to power law ρ(T)~T−α (α ≈ 0.2–0.49), which corresponds to the regime of weak localization of the charge carriers.

中文翻译：

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R0.01La0·99B6固溶体的输运特性

摘要 我们报告了 LaB6 和 R0.01La0.99B6 稀释系统（R–Ce、Pr、Nd、Eu、Gd 和 Ho）的电阻率和横向磁阻的研究，这些系统在 1.8 K 和 300 K 之间的磁场中测量82 科埃。我们的数据使我们能够观察到各种杂质对 LaB6 主体材料传输特性的影响，并伴随着各种有趣的异常，包括从正（R–La、Pr、Nd、Eu 和 Gd）到负（R –Ce, Ho) 反转点以下的磁阻状态。零场电阻率的温度依赖性可以通过 (i) 刚性硼笼的德拜项 (ΘD ≈ 1160 K) 和 (ii) La3+ 离子准局域振动的贡献 (ΘE1 ≈ 154– 156 К 和 ΘE2 ≈ 320–340 К）。我们记录了包含 R–Ce、Pr、Nd 和 Ho 中心的材料的电阻率的低 T 上升。发现，不是 Kondo 模型预测的对数行为 ρ(T)~-lnT，磁性杂质上的散射遵循幂律 ρ(T)~T−α (α ≈ 0.2–0.49)，对应于电荷载流子的弱定位机制。