Memristor devices could realize their full scaling (2D) and stacking (3D) potential if vertically integrated with a two‐terminal selector in a one selector one memristor (1S1R) crossbar array. However, for a 1S1R‐integrated device to function properly, memristor and selector should be compatible in terms of their material composition and electrical properties. A platinum (Pt)/yttria‐stabilized zirconia (YSZ)/zirconium (Zr) memristor with low forming voltage (<1.5 V), low first reset current (150 µA), fast switching speed (2 ns), low voltage (<1 V) and current (50 µA) resistive switching operation, and multi‐conductance state capabilities is reported. A low activation energy of oxygen vacancy diffusion (E_a,diffusion = 0.7 eV) measured in the YSZ switching layer enables the proposed memristor to have the observed low‐energy operation, which renders it better compatible with a selector device than the more commonly used binary oxides. For a proof‐of‐principle demonstration, the device is vertically integrated with a tunneling selector and successfully performs memristor‐electroforming operations with the selector in a self‐compliant 1S1R integrated device. 1S1R cells into a small array (2 × 2) are further investigated and electroforming and resistive switching operations at the array level are demonstrated.

中文翻译：

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用于1S1R集成和阵列操作的低开关电流和电压忆阻器

如果忆阻器器件在一个选择器和一个忆阻器（1S1R）交叉开关阵列中与两端选择器垂直集成，则可以实现其全尺寸（2D）和堆叠（3D）潜力。但是，为了使1S1R集成设备正常工作，忆阻器和选择器在材料成分和电气性能方面应兼容。铂（Pt）/氧化钇稳定的氧化锆（YSZ）/锆（Zr）忆阻器，具有低形成电压（<1.5 V），低第一复位电流（150 µA），快速开关速度（2 ns），低电压（<报告了1 V）和电流（50 µA）的电阻开关操作，以及多导通状态能力。氧空位扩散（E _{a，扩散）的}活化能低在YSZ开关层中测得的电阻（= 0.7 eV）使拟议的忆阻器具有观察到的低能量运行，这使其与选择器器件的兼容性比更常用的二元氧化物更好。为了进行原理验证演示，该设备与隧道选择器垂直集成，并在自兼容的1S1R集成设备中通过选择器成功执行了忆阻器电铸操作。进一步研究将1S1R电池分成一个小的阵列（2×2），并在阵列级别演示电铸和电阻切换操作。