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PVP Treatment Induced Gradient Oxygen Doping in In2S3 Nanosheet to Boost Solar Water Oxidation of WO3 Nanoarray Photoanode
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-03-23 , DOI: 10.1002/aenm.201903951 Wei Tian 1 , Cheng Chen 1 , Linxing Meng 1 , Weiwei Xu 1 , Fengren Cao 1 , Liang Li 1
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-03-23 , DOI: 10.1002/aenm.201903951 Wei Tian 1 , Cheng Chen 1 , Linxing Meng 1 , Weiwei Xu 1 , Fengren Cao 1 , Liang Li 1
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The photoelectrochemical performance of the WO3 photoanode is limited by the severe charge recombination in the bulk phase and at the WO3/electrolyte interface. Herein, In2S3 nanosheets are integrated onto the surface of the WO3 nanowall array photoanode, followed by a facile polyvinylpyrrolidone (PVP) solution treatment. The PVP treatment results in sulfur vacancies and a gradient oxygen doping into In2S3 from surface to interior, which induces the formation of a gradient energy band distribution. The gradient band structured In2S3 and type II band alignment at the WO3/In2S3 interface simultaneously create a channel that favors photogenerated electrons to migrate from the surface to the conductive substrate, thereby suppressing bulk carrier recombination. Meanwhile, the sulfur vacancies and oxygen doping contribute to increased charge carrier concentration, prolonged carrier lifetime, more active sites, and small interfacial transfer impedance. As a consequence, the PVP treated WO3/In2S3 heterostructure photoanode exhibits a significantly enhanced photocurrent of 1.61 mA cm−2 at 1.23 V versus reversible hydrogen electrode (RHE) and negative onset potential of 0.02 V versus RHE.
中文翻译：
PVP处理在In2S3纳米片中诱导梯度氧掺杂以促进WO3纳米阵列光电阳极的太阳能氧化。
WO 3光电阳极的光电化学性能受到本体相中和WO 3 /电解质界面处严重的电荷复合的限制。在此，将In 2 S 3纳米片整合到WO 3纳米壁阵列光电阳极的表面，然后进行简便的聚乙烯吡咯烷酮（PVP）溶液处理。PVP处理导致硫空位和从表面到内部向In 2 S 3中掺杂的梯度氧，从而诱导了梯度能带分布的形成。构造的In 2 S 3梯度带和WO 3 / In处的II型能带排列2 S 3界面同时创建了一条通道，该通道有利于光生电子从表面迁移到导电基板，从而抑制了载流子复合。同时，硫空位和氧掺杂有助于增加电荷载流子浓度，延长载流子寿命，增加活性位点和减小界面转移阻抗。结果，经PVP处理的WO 3 / In 2 S 3异质结构光阳极与可逆氢电极（RHE）相比在1.23 V处具有1.61 mA cm -2的显着增强的光电流，与RHE相比具有0.02 V的负起始电位。
更新日期：2020-03-23
中文翻译：
PVP处理在In2S3纳米片中诱导梯度氧掺杂以促进WO3纳米阵列光电阳极的太阳能氧化。
WO 3光电阳极的光电化学性能受到本体相中和WO 3 /电解质界面处严重的电荷复合的限制。在此，将In 2 S 3纳米片整合到WO 3纳米壁阵列光电阳极的表面，然后进行简便的聚乙烯吡咯烷酮（PVP）溶液处理。PVP处理导致硫空位和从表面到内部向In 2 S 3中掺杂的梯度氧，从而诱导了梯度能带分布的形成。构造的In 2 S 3梯度带和WO 3 / In处的II型能带排列2 S 3界面同时创建了一条通道，该通道有利于光生电子从表面迁移到导电基板，从而抑制了载流子复合。同时，硫空位和氧掺杂有助于增加电荷载流子浓度，延长载流子寿命，增加活性位点和减小界面转移阻抗。结果，经PVP处理的WO 3 / In 2 S 3异质结构光阳极与可逆氢电极（RHE）相比在1.23 V处具有1.61 mA cm -2的显着增强的光电流，与RHE相比具有0.02 V的负起始电位。
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