We report here a simple and robust process to convert periodic Si-doped GaN/undoped-GaN epitaxial layers into a porous-GaN/u-GaN distributed Bragg reflector (DBR) structure and demonstrate its material properties in a high-reflectance epitaxial reflector. Directional pipe-GaN layers with anisotropic optical properties were formed from n⁺-GaN : Si layers in a stacked structure through a lateral and doping-selective electrochemical etching process. Central wavelengths of the polarized reflectance spectra were measured to be 473 nm and 457 nm for the pipe-GaN reflector when the direction of the linear polarizer was along and perpendicular to the pipe-GaN structure. The DBR reflector with directional pipe-GaN layers has the potential for a high efficiency polarized light source and vertical cavity surface emitting laser applications.

中文翻译：

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管-GaN分布式布拉格反射器的各向异性特性

我们在此报告了一种简单而稳健的工艺，可将周期性硅掺杂 GaN/未掺杂 GaN 外延层转换为多孔 GaN/u-GaN 分布式布拉格反射器 (DBR) 结构，并在高反射率外延反射器中展示其材料特性。具有各向异性光学特性的定向管-GaN层是通过横向和掺杂选择性电化学蚀刻工艺由堆叠结构中的n ^{+ -GaN:Si层形成的。}当线性偏振器的方向沿着并垂直于管-GaN 结构时，测得管-GaN 反射器的偏振反射光谱的中心波长为473 nm 和457 nm。具有定向管-GaN 层的 DBR 反射器具有高效偏振光源和垂直腔表面发射激光器应用的潜力。