当前位置:
X-MOL 学术
›
J. Mater. Chem. A
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Mo-doped SnS2 with enriched S-vacancies for highly efficient electrocatalytic N2 reduction: the critical role of the Mo–Sn–Sn trimer
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2020/03/24 , DOI: 10.1039/d0ta01688h Ke Chu 1, 2, 3, 4 , Jing Wang 1, 2, 3, 4 , Ya-ping Liu 1, 2, 3, 4 , Qing-qing Li 1, 2, 3, 4 , Ya-li Guo 1, 2, 3, 4
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2020/03/24 , DOI: 10.1039/d0ta01688h Ke Chu 1, 2, 3, 4 , Jing Wang 1, 2, 3, 4 , Ya-ping Liu 1, 2, 3, 4 , Qing-qing Li 1, 2, 3, 4 , Ya-li Guo 1, 2, 3, 4
Affiliation
Vacancy engineering and heteroatom doping are two effective approaches to tailor the electronic structures of catalysts for improved electrocatalytic activity. Herein, these two approaches were rationally combined to modulate the structure of SnS2 toward the N2 reduction reaction (NRR) by means of Mo-doping, which simultaneously induced the generation of enriched S-vacancies (Vs). The developed Mo-doped SnS2 nanosheets with enriched Vs presented a conspicuously enhanced NRR activity with an NH3 yield of 41.3 μg h−1 mg−1 (−0.5 V) and a faradaic efficiency of 20.8% (−0.4 V) and are among the best SnS2-based NRR catalysts to date. Mechanistic studies revealed that the co-presence of the Mo dopant and Vs enabled the creation of Mo–Sn–Sn trimer catalytic sites, capable of strongly activating N2 even for the cleavage of the NN triple bond to the NN double bond at the N2 adsorption stage, consequently leading to a downhill process of the first hydrogenation step and a largely reduced energy barrier.
中文翻译:
Mo掺杂的SnS2具有丰富的S空位,可以高效地电催化还原N2:Mo–Sn–Sn三聚体的关键作用
空位工程和杂原子掺杂是两种定制催化剂的电子结构以提高电催化活性的有效方法。在此,将这两种方法合理地组合以通过Mo掺杂来向N 2还原反应(NRR)调节SnS 2的结构,其同时诱导了富集的S-空位(V s)的产生。具有富集的V s的已开发的Mo掺杂SnS 2纳米片呈现出显着增强的NRR活性,NH 3产率为41.3μgh -1 mg -1(-0.5 V),法拉第效率为20.8%(-0.4 V),并且是最好的SnS 2之一迄今为止的基于NRR的催化剂。机制研究表明,莫掺杂剂的共同存在和V小号启用的Mo-Sn系的Sn的创建三聚体的催化位点,能够强烈激活Ñ 2甚至对于N的裂解Ñ三键至N N双键键在N 2吸附阶段,因此导致第一个氢化步骤的下坡过程和大大降低的能垒。
更新日期:2020-04-15
中文翻译:
Mo掺杂的SnS2具有丰富的S空位,可以高效地电催化还原N2:Mo–Sn–Sn三聚体的关键作用
空位工程和杂原子掺杂是两种定制催化剂的电子结构以提高电催化活性的有效方法。在此,将这两种方法合理地组合以通过Mo掺杂来向N 2还原反应(NRR)调节SnS 2的结构,其同时诱导了富集的S-空位(V s)的产生。具有富集的V s的已开发的Mo掺杂SnS 2纳米片呈现出显着增强的NRR活性,NH 3产率为41.3μgh -1 mg -1(-0.5 V),法拉第效率为20.8%(-0.4 V),并且是最好的SnS 2之一迄今为止的基于NRR的催化剂。机制研究表明,莫掺杂剂的共同存在和V小号启用的Mo-Sn系的Sn的创建三聚体的催化位点,能够强烈激活Ñ 2甚至对于N的裂解Ñ三键至N N双键键在N 2吸附阶段,因此导致第一个氢化步骤的下坡过程和大大降低的能垒。