Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 μm were obtained by using this method, and a complex three-dimensional structure with an 80 μm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.

中文翻译：

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单晶石英复杂结构微加工技术研究

单晶石英材料被广泛应用于谐振器和传感器的制造中，但是由于其高硬度而难以加工。本文提出了一种新颖的制造单晶石英结构的方法。该方法包括硅上石英（QoS）技术和电感耦合等离子体（ICP）蚀刻，这使得用晶体石英制造复杂结构变得可行。QoS方法包括将硅和石英结合在一起，然后对石英进行减薄和抛光，从而可以在硅上制造超薄石英晶片。以此方式，代替常规的用氢氟酸的湿法蚀刻，可以使用ICP干法蚀刻法容易地蚀刻石英层。然后，通过去除硅晶片获得纯石英材料的结构。此外，硅层可以加工成适当的结构。该方面克服了处理具有不同晶体取向的单晶石英的复杂结构的困难。通过该方法，可以得到厚度小于40μm的Z切割的薄单晶石英晶片，通过ICP蚀刻，也可以获得宽度为80μm的复杂的三维结构。该方法可应用于制造基于晶体的基于石英的传感器和执行器，例如石英谐振加速度计。通过该方法，可以得到厚度小于40μm的Z切割的薄单晶石英晶片，通过ICP蚀刻，也可以获得宽度为80μm的复杂的三维结构。该方法可应用于制造基于晶体的基于石英的传感器和执行器，例如石英谐振加速度计。通过该方法，可以得到厚度小于40μm的Z切割的薄单晶石英晶片，通过ICP蚀刻，也可以获得宽度为80μm的复杂的三维结构。该方法可以应用于制造基于晶体的基于石英的传感器和执行器，例如石英谐振加速度计。