In this study, poly (N-vinylcarbazole) was blended with CdSe/ZnS core-shell quantum dots of various dimensions to be used as a single emissive layer of flexible polymer white organic light-emitting diodes (WOLEDs). A structure of WOLEDs was deposited on polyethylene terephthalate (PET) substrates. A luminance and maximum luminous efficiency of 4070.2 cd/m² and 2.84 cd/A were respectively obtained for the WOLEDs prepared using n-type gallium zinc oxide (GZO) and n-type indium gallium zinc oxide (IGZO) films as the electron transport layer and cathode, respectively. Because the current density can be increased by increasing the carrier transport surface area, the 2-μm-periodic SiO₂ micromesh was fabricated on PET substrates to enhance the surface area of a MoO₃ hole transport layer and a GZO electron transport layer. Furthermore, the GZO electron transport layer could provide a moisture barrier function. Compared with WOLEDs without the SiO₂ micromesh, the prepared WOLEDs had an increased current density of 404.5 (compared with 222.8) mA/cm² when operating at 11 V. Moreover, their associated luminance and maximum luminous efficiency increased to 7016.1 cd/m² and 3.04 cd/A, respectively.

在这项研究中，将聚（N-乙烯基咔唑）与各种尺寸的CdSe / ZnS核壳量子点混合，以用作柔性聚合物白色有机发光二极管（WOLED）的单个发射层。WOLED的结构沉积在聚对苯二甲酸乙二醇酯（PET）衬底上。对于使用n型氧化锌镓（GZO）和n型氧化铟镓锌（IGZO）薄膜制备的WOLED ，分别获得了4070.2 cd / m ²和2.84 cd / A的亮度和最大发光效率。层和阴极。由于可以通过增加载流子传输表面积来增加电流密度，因此在PET基板上制作了2μm周期的SiO ₂微孔以提高MoO ₃的表面积空穴传输层和GZO电子传输层。此外，GZO电子传输层可以提供防潮功能。与没有SiO ₂微孔的WOLED相比，制得的WOLED在11 V下工作时具有404.5（相比于222.8）mA / cm ²的增加的电流密度。此外，它们的相关亮度和最大发光效率增加到7016.1 cd / m ^2。和3.04 cd / A。