Abstract Shear-induced chemical etching reactions of single-crystalline Si(100), Si(110), and Si(111) surfaces were studied in acidic, neutral, and basic aqueous solutions. Measuring the applied load dependence of substrate etching yield and analyzing the data with the mechanically-assisted thermal activation model, the critical activation volume and activation barrier were determined for mechanochemical etching of three crystallographic surfaces. The pH dependence of Si(110) etching is quite distinct from those of Si(100) and Si(111). The results suggested that the mechanochemical activation effect is larger for Si(100) and Si(111) than Si(110) which is chemically more reactive than the other two surfaces. The findings of this study may provide deeper insights for mechanistic understanding of the scanning probe microscopy based nanomanufacturing and chemical mechanical polishing processes.

中文翻译：

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水溶液中硅表面摩擦诱导材料去除中溶液化学和机械活化之间的相互作用

摘要 在酸性、中性和碱性水溶液中研究了单晶 Si(100)、Si(110) 和 Si(111) 表面的剪切诱导化学蚀刻反应。测量衬底蚀刻产量的应用负载依赖性并使用机械辅助热激活模型分析数据，确定了三个晶体表面的机械化学蚀刻的临界激活体积和激活势垒。Si（110）蚀刻的pH依赖性与Si（100）和Si（111）的pH依赖性完全不同。结果表明，Si(100) 和 Si(111) 的机械化学活化效应大于 Si(110)，后者在化学上比其他两个表面更具反应性。