The high-temperature behavior of an electrically conductive, opaque and hard Hf₇B₂₃Si₂₂C₆N₄₀ ceramic film with an amorphous structure was systematically investigated in air up to 1700 °C and inert gases up to 1600 °C. The film was prepared by reactive pulsed dc magnetron sputter deposition in an argon‑nitrogen gas mixture. The study is focused on the oxidation resistance of the film and the evolution of the structure, microstructure and elemental composition upon annealing in air and argon, and on the thermal stability of its hardness and electrical resistivity upon annealing in helium. The film exhibits an excellent oxidation resistance up to 1600 °C due to the formation of a compact protective oxide surface layer with a nanocomposite structure consisting of monoclinic and tetragonal/orthorhombic HfO₂ nanocrystallites surrounded by a SiO₂-based amorphous matrix. The film itself crystallizes into several phases such as HfB₂, HfC_0.5N_0.5 and α-Si₃N₄ upon annealing but its elemental composition remains unaffected up to 1600 °C. In addition, the hardness and electrical resistivity exhibit also very high thermal stability.

导电，不透明且坚硬的Hf ₇ B ₂₃ Si ₂₂ C ₆ N ₄₀的高温行为在高达1700°C的空气和高达1600°C的惰性气体中，系统地研究了具有非晶结构的陶瓷膜。该膜是通过在氩气-氮气混合物中进行反应性脉冲直流磁控溅射沉积而制备的。该研究的重点是在空气和氩气中退火后薄膜的抗氧化性，结构，微观结构和元素组成的演变，以及在氦气中退火后其硬度和电阻率的热稳定性。由于形成了具有纳米复合结构的致密保护性氧化物表面层，该复合层由单斜晶和四方/斜方HfO ₂纳米晶体组成，并被SiO ₂包围，因此该薄膜在高达1600°C的温度下具有出色的抗氧化性基无定形矩阵。膜本身结晶成几个阶段诸如HfB ₂，HFC _0.5 Ñ _0.5和α-的Si ₃ Ñ ₄退火时，但其元素组成不受影响高达1600℃。另外，硬度和电阻率也表现出非常高的热稳定性。