We have carried out the structural, electronic and optical properties of Iron (Fe)-doped TiO₂ thin films by sol-gel technique. The results reveal that the thin films form in a granular structure where particle-like grains cover the surface. Photophysical features of the thin films are performed by UV–vis spectrometry. The optical bandgap of undoped TiO₂ thin film decreases from 3.17 eV to 3.05 eV with an increase in atomic ratios of Fe content, so the electron transfer is easier from the valence band to the conduction band. The current-voltage (I–V) and capacitance-voltage (C–V) characteristics of the undoped and Fe-doped TiO₂ thin films are investigated under dark and various lighting intensities. Our results show that the photocurrents increase with increasing intensities of illumination. The photodiodes also show a decreasing capacitance with increasing frequency. From I–V and C–V plots, the photodiodes show rectifying properties and good photovoltaic behavior. Herein, the results display that the produced new Fe-doped TiO₂ thin film samples can be used for photodetector applications.

我们已经通过溶胶-凝胶技术进行了铁（Fe）掺杂的TiO ₂薄膜的结构，电子和光学性质。结果表明，薄膜形成为颗粒状颗粒覆盖表面的颗粒状结构。薄膜的光物理特征通过紫外可见光谱法进行。随着Fe含量的原子比增加，未掺杂的TiO ₂薄膜的光学带隙从3.17 eV降低到3.05 eV，因此电子更容易从价带到导带转移。未掺杂和掺铁的TiO ₂的电流电压（IV）和电容电压（CV）特性在黑暗和各种光照强度下研究薄膜。我们的结果表明，光电流随着照明强度的增加而增加。光电二极管还显示出随频率增加而减小的电容。从IV和CV曲线可以看出，光电二极管显示出整流特性和良好的光伏行为。在此，结果表明，所生产的新的Fe掺杂的TiO ₂薄膜样品可以用于光电探测器应用。