Abstract Multilayered anatase TiO2 films doped with 0.03 and 1.2 at.% vanadium, deposited on p-type Si substrates by the sol-gel layer-by-layer method are studied to reveal the influence of doping on the electrical properties of the films. Undoped TiO2 and doped TiO2:V films were incorporated in Metal-Insulator-Semiconductor structures and their current-voltage characteristics were measured and analyzed. The specific resistivity is in the order of 105 Ohm.cm, decreasing by increasing the electrical field, an evidence of the electron injection in these TiO2 and TiO2:V films. The current through the films is non-conduction band current limited with trap charge via deep levels with energy distribution in the TiO2 bandgap. In the 77−300 K temperature range the current at high electric fields is carried out by the electron inter-trap tunneling in these TiO2 films.

中文翻译：

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钒掺杂的 TiO2 溶胶-凝胶薄膜中的陷阱间隧穿

摘要 研究了通过溶胶-凝胶逐层法沉积在 p 型 Si 衬底上的掺杂 0.03 和 1.2 at.% 钒的多层锐钛矿 TiO2 薄膜，以揭示掺杂对薄膜电性能的影响。未掺杂的 TiO2 和掺杂的 TiO2:V 薄膜被结合到金属-绝缘体-半导体结构中，并测量和分析了它们的电流-电压特性。电阻率约为 105 Ohm.cm，随着电场的增加而降低，这是这些 TiO2 和 TiO2:V 薄膜中电子注入的证据。通过薄膜的电流是非导带电流，通过深能级的陷阱电荷限制在 TiO2 带隙中的能量分布。