In the Post-Moore era, improving energy efficiency is an urgent requirement for micro-electronics towards the Internet of Things, Artificial Intelligence, 5th-Generation. Especially, 2D materials with natural passivation, gate electrostatics, and high mobility have attracted significant attention in integrated circuits in the race towards next-generation field-effect transistors (FETs). Here, coupling with first-principles and nonequilibrium Green’s function approaches, we performed a physical understanding of the ballistic transport properties of a novel V-V binary bismuth-nitride (BiN) material. Promisingly, monolayer BiN holds the sharp conduction band and flat valence band edges, which exhibits disparate effective mass. The simulated sub-10 nm monolayer BiN transistors present potential device performance and fulfill the high-performance (HP) and low-power (LP) requirements of the International Technology Roadmap for Semiconductors (ITRS) 2028 goals with the optimal parameters. Furthermore, by comprehensively analyzing the effective mass, density of states, on-state current, sub-threshold swing, etc., the materials whose band dispersion with the extreme feature have more advantages in transistors. Also, a benchmark of energy-delay product confirms that BiN FETs possess sufficient competitiveness among other 2D FETs. We believe that it could be a guidance for designing potential channel materials for next-generation FETs.

中文翻译：

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通过弹道传输和不同的有效质量设计低于10 nm的金属氧化物半导体场效应晶体管：二维BiN案例

在后摩尔时代，提高能源效率是微电子向物联网，人工智能（第五代）的迫切要求。特别是，具有自然钝化，栅极静电和高迁移率的2D材料在争夺下一代场效应晶体管（FET）的竞争中引起了集成电路的极大关注。在这里，结合第一性原理和非平衡格林函数方法，我们对新型VV二元氮化铋（BiN）材料的弹道传输特性进行了物理理解。很有希望的是，单层BiN拥有清晰的导带和平坦的价带边缘，这​​显示出不同的有效质量。经过仿真的10纳米以下单层BiN晶体管具有潜在的器件性能，并以最佳参数满足了《国际半导体技术路线图（ITRS）2028》目标的高性能（HP）和低功耗（LP）要求。此外，通过综合分析有效质量，状态密度，通态电流，亚阈值摆幅等，具有极高特征的带分散的材料在晶体管中具有更多优势。同样，能量延迟产品的基准也证明BiN FET在其他2D FET中具有足够的竞争力。我们认为，这可以为设计下一代FET的潜在沟道材料提供指导。此外，通过综合分析有效质量，状态密度，通态电流，亚阈值摆幅等，具有极高特征的带分散的材料在晶体管中具有更多优势。同样，能量延迟产品的基准也证明BiN FET在其他2D FET中具有足够的竞争力。我们认为，这可以为设计下一代FET的潜在沟道材料提供指导。此外，通过综合分析有效质量，状态密度，通态电流，亚阈值摆幅等，具有极高特征的带分散的材料在晶体管中具有更多优势。同样，能量延迟产品的基准也证实了BiN FET在其他2D FET中具有足够的竞争力。我们认为，这可以为设计下一代FET的潜在沟道材料提供指导。