Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers,Nano Letters

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Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-23 , DOI: 10.1021/acs.nanolett.0c00522
Woojin Choi ₁ , Renjie Chen ₁ , Cooper Levy ₁ , Atsunori Tanaka ₂ , Ren Liu ₁ , Venkatesh Balasubramanian ₃ , Peter M. Asbeck ₁ , Shadi A. Dayeh _{1,

2}

Affiliation

Transistors are the backbone of any electronic and telecommunication system but all known transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a novel transistor with the best linearity achieved to date, attained by sequential turn-on of multiple channels composed of a planar top-gate and several trigate Fin field-effect transistors (FETs), using AlGaN/GaN structures. A highly linearized transconductance plateau of >6 V resulted in a record linearity figure of merit OIP3/P_DC of 15.9 dB at 5 GHz and a reduced third-order intermodulation power by 400× in reference to a conventional planar device. The proposed architecture also features an exceptional performance at 30 GHz with an OIP3/P_DC of ≥8.2 dB and a minimum noise figure of 2.2 dB. The device demonstrated on a scalable Si substrate paves the way for GaN low noise amplifiers (LNAs) to be utilized in telecommunication systems, and is also translatable to other material systems.

中文翻译：

毫米波低噪声放大器的本征线性晶体管

晶体管是任何电子和电信系统的骨干，但是所有已知的晶体管本质上都是非线性的，会引入信号失真。在这里，我们演示了一种新型晶体管，该晶体管迄今为止具有最佳线性，这是通过使用AlGaN / GaN结构依次导通由平面顶栅和几个三栅Fin场效应晶体管（FET）组成的多个通道实现的。相对于传统的平面器件，> 6 V的高度线性化跨导平稳期在5 GHz时产生了创纪录的线性OIP3 / P _DC品质因数，为15.9 dB，并且三阶互调功率降低了400倍。拟议的架构还具有OIP3 / P _DC在30 GHz时的出色性能≥8.2 dB，最小噪声系数为2.2 dB。在可缩放的Si基板上演示的器件为GaN低噪声放大器（LNA）在电信系统中的使用铺平了道路，并且还可以转换为其他材料系统。

更新日期：2020-04-24

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