当前位置: X-MOL 学术Nano Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-23 , DOI: 10.1021/acs.nanolett.0c00522
Woojin Choi 1 , Renjie Chen 1 , Cooper Levy 1 , Atsunori Tanaka 2 , Ren Liu 1 , Venkatesh Balasubramanian 3 , Peter M. Asbeck 1 , Shadi A. Dayeh 1, 2
Affiliation  

Transistors are the backbone of any electronic and telecommunication system but all known transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a novel transistor with the best linearity achieved to date, attained by sequential turn-on of multiple channels composed of a planar top-gate and several trigate Fin field-effect transistors (FETs), using AlGaN/GaN structures. A highly linearized transconductance plateau of >6 V resulted in a record linearity figure of merit OIP3/PDC of 15.9 dB at 5 GHz and a reduced third-order intermodulation power by 400× in reference to a conventional planar device. The proposed architecture also features an exceptional performance at 30 GHz with an OIP3/PDC of ≥8.2 dB and a minimum noise figure of 2.2 dB. The device demonstrated on a scalable Si substrate paves the way for GaN low noise amplifiers (LNAs) to be utilized in telecommunication systems, and is also translatable to other material systems.

中文翻译:

毫米波低噪声放大器的本征线性晶体管

晶体管是任何电子和电信系统的骨干,但是所有已知的晶体管本质上都是非线性的,会引入信号失真。在这里,我们演示了一种新型晶体管,该晶体管迄今为止具有最佳线性,这是通过使用AlGaN / GaN结构依次导通由平面顶栅和几个三栅Fin场效应晶体管(FET)组成的多个通道实现的。相对于传统的平面器件,> 6 V的高度线性化跨导平稳期在5 GHz时产生了创纪录的线性OIP3 / P DC品质因数,为15.9 dB,并且三阶互调功率降低了400倍。拟议的架构还具有OIP3 / P DC在30 GHz时的出色性能≥8.2 dB,最小噪声系数为2.2 dB。在可缩放的Si基板上演示的器件为GaN低噪声放大器(LNA)在电信系统中的使用铺平了道路,并且还可以转换为其他材料系统。
更新日期:2020-04-24
down
wechat
bug